An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

In order to attain low drive voltage and high power conversion efficiency in tandem OLEDs, the mechanism for carrier generation/separation at the intermediate connecting parts, which are interposed between emission units, has been examined, and a new intermediate connector has been proposed. Voltage increase due to the provision of the new intermediate connector is minimized, and marked decrease in drive voltage of the tandem OLEDs has been attained.

60.2: Intermediate Connector with Suppressed Voltage Loss for White Tandem OLEDs

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

We designed, prototyped, and evaluated LCD integrated with a gate driver and a source driver using amorphous In-Ga-Zn-Oxide TFTs having bottom-gate bottom-contact structure, thereby obtaining TFTs with superior characteristics Then, we prototyped the world's first 4-inch QVGA LCD and integrated the gate driver and source driver on the display panel

15.2: Development of Driver‐Integrated Panel Using Amorphous In‐Ga‐Zn‐Oxide TFT

We have developed a 4.0 inch QVGA AMOLED display using amorphous In-Ga-Zn-Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiOx with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.

21.3: 4.0 In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Light emitting device and method for manufacturing the same

In this paper, we introduce a useful composite layer, comprising hole-transporting materials with molybdenum oxide. By using the composite as a buffer layer on an anode, an OLED with low drive voltage can be obtained, and pixel defect formation can be effectively suppressed.

P‐185: Low‐Drive‐Voltage OLEDs with a Buffer Layer Having Molybdenum Oxide

It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Junichiro Sakata

Papers

15.2: Development of Driver‐Integrated Panel Using Amorphous In‐Ga‐Zn‐Oxide TFT

21.3: 4.0 In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer

Light emitting device and method for manufacturing the same

P‐185: Low‐Drive‐Voltage OLEDs with a Buffer Layer Having Molybdenum Oxide

Transistor and display device