Junyao Shen

TL;DR: In this paper, a 15°YX-LiNbO3(LN)/SiO2/Si multilayer structure was proposed, where both LN and SiO2 films possess uniform thickness and the interfaces between films are quite clear.

TL;DR: In this article, a 15°Y-X LiNbO3/SiO2/SiC multilayered substrate was designed and fabricated to suppress spurious resonance due to Rayleigh-mode and transverse-mode responses, and one-port resonators with a clean spectrum, a high electromechanical coupling coefficient of 22.00%, and an admittance ratio (impedance ratio) over 65 dB were successfully implemented.

TL;DR: In this paper, highly oriented ZnO piezoelectric films were deposited on high acoustic velocity SiC substrates for the first time, and the comprehensive experimental and theoretical investigations about phase velocities, the electromechanical coupling coefficients, and quality factors of one-port SAW resonators were studied.

TL;DR: In this article, high-frequency and wide-band surface acoustic wave (SAW) devices with the resonant frequency ranging from 4 to 6 GHz were fabricated on SiC substrates using a magnetron sputtering method.

TL;DR: The results show that the frequency can be doubled under the same critical resolution of lithography due to the shortening of wavelength, and the 3D layout of IDTs is available for SAW devices based on piezoelectric thin film or piezOElectric single crystal.