Fei Zeng

TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.

TL;DR: In this paper, the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics, are discussed.

TL;DR: A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism and electrical properties into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments, promising for broadening the applications of random access memories to encode quaternary information.

TL;DR: In this article, a memristor with the simple structure Ag/poly(3,4-ethylenedioxythiophene):poly (styrenesulphonate) (PEDOT:PSS)/Ta was fabricated.

TL;DR: In this paper, a supercoupling mechanism in terms of bound magnetic polarons is proposed to discuss the ferromagnetism in the dielectric ground state of transition-metal doped oxides.