K. C. Rajkumar

TL;DR: In this paper, direct evidence for interplanar relaxation in islands at the initial stages of strained epitaxy was presented using molecular beam epitaxically deposited In 0.5Ga0.5As on GaAs(100), and the existence of atomic displacements in the substrates to unexpectedly large depths of ∼150 A was found.

TL;DR: In this article, the growth control of GaAs epilayers with specular surface, free of superficial pyramid shape features and bulk twins, is achieved on a nonmisoriented GaAs(111)B substrate via in situ, real time measurement of specular beam intensity of reflection high energy electron diffraction (RHEED).

TL;DR: The first realization of three‐dimensionally confined semiconductor heterostructures via a one‐step growth on nonplanar patterned substrate is reported, and a substrate encoded size reducing epitaxical growth process is exploited.

TL;DR: In this paper, the first realization on nonplanar patterned substrates of optically active three-dimensionalally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth was carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtook the as-patterned side facets and lead to mesa pinch-off.

TL;DR: In this article, three-dimensional GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy.