K
K. Rammohan
Researcher at University of Southern California
Publications - 17
Citations - 172
K. Rammohan is an academic researcher from University of Southern California. The author has contributed to research in topics: Cathodoluminescence & Quantum well. The author has an hindex of 7, co-authored 15 publications receiving 163 citations.
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Optically active three‐dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B
TL;DR: In this paper, the first realization on nonplanar patterned substrates of optically active three-dimensionalally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth was carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtook the as-patterned side facets and lead to mesa pinch-off.
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Study of μm‐scale spatial variations in strain of a compositionally step‐graded InxGa1−xAs/GaAs(001) heterostructure
TL;DR: In this paper, the relaxation of strain in compositionally step-graded InxGa1−xAs layers grown on GaAs(001) has been examined with cathodoluminescence (CL) wavelength and linearly polarized imaging approaches.
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Realization of three-dimensionally confined structures via one-step in situ molecular beam epitaxy on appropriately patterned GaAs(111)B and GaAs(001)
TL;DR: In this paper, the realization of 3D GaAs/AlGaAs structures on GaAs (111)B and GaAs(001) substrates via one step in situ molecular beam epitaxy is reported.
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Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates
TL;DR: In this paper, structural, electronic, and optical properties of partially strain-relaxed InxGa1−xAs layers, grown by molecular beam epitaxy on both misoriented and nominally flat (001) GaAs substrates, were investigated.
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Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001).
TL;DR: Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.