Journal ArticleDOI
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
TLDR
In this paper, direct evidence for interplanar relaxation in islands at the initial stages of strained epitaxy was presented using molecular beam epitaxically deposited In 0.5Ga0.5As on GaAs(100), and the existence of atomic displacements in the substrates to unexpectedly large depths of ∼150 A was found.Abstract:
Direct evidence for interplanar relaxation in islands at the initial stages of strained epitaxy is presented using molecular beam epitaxically deposited In0.5Ga0.5As on GaAs(100). Concomitant existence of atomic displacements in the substrates to unexpectedly large depths of ∼150 A is found. In incoherent islands, defects are found to be introduced symmetrically near the island edges.read more
Citations
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Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
Journal ArticleDOI
Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
TL;DR: In this paper, a two dimensional nucleation during the initial growth was observed by in situ reflection high energy electron diffraction, followed by a morphology transition to 3D nucleation by using molecular beam epitaxy.
Journal ArticleDOI
Ion and electron irradiation-induced effects in nanostructured materials
TL;DR: In this article, the authors review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes.
Journal ArticleDOI
Structural properties of self-organized semiconductor nanostructures
J. Stangl,Václav Holý,G. Bauer +2 more
TL;DR: In this paper, the authors discuss the calculation of strain fields, which play an important role in the formation of such nanostructures and also influence their structural and optoelectronic properties.
Journal ArticleDOI
Spontaneous superlattice formation in nanorods through partial cation exchange.
Richard D. Robinson,Bryce Sadtler,Bryce Sadtler,Denis Demchenko,Denis Demchenko,Can K. Erdonmez,Can K. Erdonmez,Lin-Wang Wang,Lin-Wang Wang,A. Paul Alivisatos,A. Paul Alivisatos +10 more
TL;DR: A colloidal route to synthesizing CdS-Ag2S nanorod superlattices through partial cation exchange is demonstrated and it is shown that strain induces the spontaneous formation of periodic structures.
References
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Book
Theory of elasticity
TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
Journal ArticleDOI
Dislocation-free Stranski-Krastanow growth of Ge on Si(100).
D. J. Eaglesham,M. Cerullo +1 more
TL;DR: It is shown that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free, and the limiting critical thickness of coherent SK islands is shown to be higher than that for 2D growth.
Journal ArticleDOI
Initial stages of epitaxial growth of GaAs on (100) silicon
TL;DR: In this article, the early stages of molecular beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces were observed and cross-sectional transmission electron microscopy images directly revealed three-dimensional island growth for substrate temperatures above 300 °C.
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Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition
Robert Hull,A. Fischer-Colbrie +1 more
TL;DR: In this paper, the initial nucleation and growth stages of ultrathin GaAs films grown by molecular beam epitaxy upon Si(100) substrates were studied by high-resolution transmission electron microscopy.
Journal ArticleDOI
Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces
TL;DR: The formation, interaction, and propagation of misfit dislocations in molecular beam epitaxial InGaAs/GaAs heterointerfaces have been studied by transmission electron microscopy.