K
K. Galiano
Researcher at Ohio State University
Publications - 7
Citations - 54
K. Galiano is an academic researcher from Ohio State University. The author has contributed to research in topics: Deep-level transient spectroscopy & Grain boundary. The author has an hindex of 2, co-authored 7 publications receiving 39 citations.
Papers
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Journal ArticleDOI
Direct nm-Scale Spatial Mapping of Traps in CIGS
Pran K. Paul,D. W. Cardwell,Christine Jackson,K. Galiano,Krishna Aryal,Jonathan P. Pelz,Sylvain Marsillac,Steven A. Ringel,Tyler J. Grassman,Aaron R. Arehart +9 more
TL;DR: In this paper, a deep-level transient spectroscopy (nano-DLTS) was used to simultaneously map the spatial distribution of the $E_V$ + 0.47 eV trap in p-type Cu(In,Ga)Se2 with surface topography, providing a spatially resolved correlation between electrical traps with physical structure.
Journal ArticleDOI
Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride
K. Galiano,Julia I. Deitz,Santino D. Carnevale,D. A. Gleason,Pran K. Paul,Z. Zhang,Brian M. McSkimming,James S. Speck,Steven A. Ringel,Tyler J. Grassman,Aaron R. Arehart,Jonathan P. Pelz +11 more
TL;DR: In this paper, two complementary nm-resolution characterization techniques, scan probe deep level transient spectroscopy (SP-DLTS) and electron channeling contrast imaging (ECCI), were used to spatially map the lateral distribution of these traps and to image and characterize their relation to residual threading dislocations within NH3-MBE-grown n-type GaN.
Proceedings ArticleDOI
Direct nm-scale spatial mapping of traps in CIGS
Pran K. Paul,D. W. Cardwell,Christine Jackson,K. Galiano,Krishna Aryal,Jonathan P. Pelz,Sylvain Marsillac,Steven A. Ringel,Tyler J. Grassman,Aaron R. Arehart +9 more
TL;DR: In this article, the spatial distribution of the EV+0.47 eV trap in p-type Cu(In,Ga)Se2 (CIGS) is mapped simultaneously with topography to correlate the electrical traps with physical structure.
Proceedings ArticleDOI
Comparative study of 2.05 eV AIGaInP and metamorphic GalnP materials and solar cells grown by MBE and MOCVD
Daniel J. Chmielewski,K. Galiano,Pran K. Paul,D. W. Cardwell,Santino D. Carnevale,John A. Carlin,Aaron R. Arehart,Tyler J. Grassman,Steven A. Ringel +8 more
TL;DR: In this paper, the authors investigated 2.05 eV bandgap GaInP alloys for use as the top junction of IMM solar cells and compared MBE and MOCVD growth methods to achieve this goal.
Journal ArticleDOI
Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing
D. A. Gleason,K. Galiano,Jeff L. Brown,Albert Hilton,Steven A. Ringel,Aaron R. Arehart,Eric R. Heller,Donald L. Dorsey,Jonathan P. Pelz +8 more
TL;DR: In this article, deep-level transient spectroscopy (SP-DLTS) is applied to cross-sectioned, fully processed, commercially sourced AlGaN/GaN Schottky barrier diodes and high electron mobility transistors (HEMTs) biased in situ.