The optical properties of luminescence centres in silicon

Electron–Phonon Interaction in n‐Si

The Magnetophonon Effect

The advantages of Fourier analysis of quantum magnetoresistance peaks are demonstrated in the first application of these techniques to a study of the magnetophonon effect in a number of semiconductors and also to the subnikov-de Haas effect in MOS devices. The change in amplitude of these series is investigated as a function of applied electric field. The phonons involved are identified and are all shown to be intervalley with the exception of the highest energy phonon. In contrast Fourier analysis of the magnetophonon spectrum for n-Ge shows that intervalley scattering in this material is weaker by at least a factor of 20 than intravalley scattering by high energy phonons. With both n-Ge and n-GaAs considerable sharpening of the magnetophonon peaks is detected and a strong second harmonic of the fundamental magnetophonon frequency is observed in each case on the Fourier analysis. With n-GaAs as the temperature dependence of the amplitude and damping of the magnetophonon series is compared with the theory developed by Barker (1972).

Fourier analysis of magnetophonon and two-dimensional Shubnikov-de Haas magnetoresistance structure

A critical review is given of recent experimental and quantum transport theoretical studies of hot electrons in quantizing magnetic fields. Particular attention is paid to new effective temperature models and to numerical solutions to exact quantum kinetic equations. The latter are discussed within a unified framework based on resolvent analyses of the Liouville equation. Special emphasis is given to carrier-carrier scattering, non-parabolicity, resonance phenomena and non-heating non-linear departures from Ohm's law. The optical determination of quantum distributions and the application of Fourier transform and harmonic detection techniques to hot carrier magneto-resonance spectroscopy is discussed with emphasis on magnetophonon and magnetic-impurity phenomena.

K. Hansen

Papers

A study of intervalley scattering in n-Si by stress-dependent longitudinal magnetophonon resonance