We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

The optical properties of luminescence centres in silicon

Under suitable circumstances imperfections in semiconductors can bind electrons (holes) with a binding energy small compared to the intrinsic energy gap of the host; the wavefunctions characterising the energy levels of the imperfection are extended over many lattice spacings. This review discusses the electronic energy levels of chemical impurities in the classic group IV elemental and the III-V and II-VI compound semiconductors. The large dielectric constant of the host, the anisotropic effective mass tensor and/or the small effective mass of the charge carrier are the factors which play a significant role in the description of the electronic energy levels; they can be viewed as scaled-down versions of the hydrogen atom with bound states having binding energies orders of magnitude smaller than those of the hydrogen atom. The authors present the experimental results on the spectroscopy of donors and acceptors in semiconductors together with the theory necessary for their interpretation. They discuss the experimental results and the theory of the bound states of impurities in the context of the symmetry and the effective-mass parameters of the band extrema with which they are associated. Effects of external perturbation-piezo- and magneto-spectroscopy-are presented both from experimental and theoretical points of view. The review concludes with the experimental observations on the linewidths of the excitation spectra of donors and acceptors in semiconductors and an analysis of the causes underlying them.

https://iopscience.iop.org/article/10.1088/0034-4885/44/12/002/pdf

Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors

A minimal basis semi-ab initio approach to the band structures of semiconductors

Effective-mass theory is used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) in five direct-gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb, covering the 0.88 to 10 μm wavelength range. The magnitude of the effect is determined by fitting experimental absorption data. Results are given for photon energies from the band gap to 100 meV below the gap for applied electric fields from 3 \times 10^{3} to 3 \times 10^{5} V/cm. Values of \Delta n and \Delta k as large as 10-3to 10-2are found. The results are applicable to integrated-optic devices including switches and modulators.

Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb

Hole mass measurement in p-type InP and GaP by submillimetre cyclotron resonance in pulsed magnetic fields

Submillimetre cyclotron resonance of electrons in GaP

A study of intervalley scattering in n-Si by stress-dependent longitudinal magnetophonon resonance

Effet Shubnikov-de Haas dans InP

Shubnikov-de Haas oscillations in the longitudinal magnetoresistance of heavily-doped p-type germanium (p ≈ 3.9 × 1018 cm−3) are observed for H parallel to 〈100〉, 〈110〉, and〈111〉. The direction-dependent behaviour of these oscillations shows the anisotropy and non-equidistance (Luttinger effect) of the light-hole Landau levels.



Shubnikov-de Haas-Oseillationen der longitudinalen Magnetowiderstandsanderung von stark dotiertem, p-leitendem Germanium (p ≈ 3.9 × 1018 cm−3) wurden fur H parallel zu 〈100〉, 〈110〉 und〈111〉 beobachtet. Das richtungsabhangige Verhalten dieser Oszillationen zeigt die Anisotropie und die ungleichen Abstande (Luttinger-Effekt) der Landau-Niveaus der leichten Locher.

R. Barbaste

Papers

Hole mass measurement in p-type InP and GaP by submillimetre cyclotron resonance in pulsed magnetic fields

Submillimetre cyclotron resonance of electrons in GaP

A study of intervalley scattering in n-Si by stress-dependent longitudinal magnetophonon resonance

Effet Shubnikov-de Haas dans InP

Shubnikov‐de Haas Effect in the Longitudinal Magnetoresistance of p‐Type Germanium