K
K.-T. Chen
Researcher at National Taiwan Normal University
Publications - 9
Citations - 145
K.-T. Chen is an academic researcher from National Taiwan Normal University. The author has contributed to research in topics: Transistor & Ferroelectricity. The author has an hindex of 4, co-authored 9 publications receiving 78 citations. Previous affiliations of K.-T. Chen include National Chung Hsing University.
Papers
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Journal ArticleDOI
Non-Volatile Ferroelectric FETs Using 5-nm Hf 0.5 Zr 0.5 O 2 With High Data Retention and Read Endurance for 1T Memory Applications
K.-T. Chen,H.-Y. Chen,C.-Y. Liao,G.-Y. Siang,C. Lo,Ming-Han Liao,K.-S. Li,Shun-Ping Chang,Min-Hung Lee +8 more
TL;DR: In this article, a gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented, and the mechanism of retention and endurance was discussed.
Proceedings ArticleDOI
Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs
Min-Hung Lee,K.-T. Chen,C.-Y. Liao,S.-S. Gu,G.-Y. Siang,Y.-C. Chou,H.-Y. Chen,J. Le,R.-C. Hong,Z.-Y. Wang,S.-Y. Chen,P.-G. Chen,M. Tang,Y. D. Lin,Heng-Yuan Lee,K.-S. Li,Chee-Wee Liu +16 more
TL;DR: In this article, the negative-capacitance (NC) Nanosheet (NS) GAA-FETs and Fin FETs were experimentally presented with a sub-60m V/dec current magnitude of >4 and ∼5 decades for NC-NSGAA and FinFET, respectively.
Journal ArticleDOI
Ferroelectric HfZrO 2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
Kuo-Yu Hsiang,C.-Y. Liao,K.-T. Chen,Y.-Y. Lin,C.-Y. Chueh,Chun-Ming Chang,Y.-J. Tseng,Yao-Joe Yang,Shun-Ping Chang,Min-Sheng Liao,Tuo-Hung Hou,C.-H. Wu,C.-C. Ho,J.-P. Chiu,C.-S. Chang,Min-Hung Lee +15 more
TL;DR: Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO2 metal/ferroelectric/metal (MFM) capacitor and ferroElectric field-effect transistor (FeFET) is demonstrated experimentally with weight transfer to increase the accuracy and accelerate the deep neural network (DNN) training.
Proceedings ArticleDOI
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs
Min-Hung Lee,Y.-Y. Lin,Yao-Joe Yang,F.-C. Hsieh,Shun-Ping Chang,Ming-Han Liao,K.-S. Li,Chee-Wee Liu,K.-T. Chen,C.-Y. Liao,G.-Y. Siang,C. Lo,H.-Y. Chen,Y.-J. Tseng,C.-Y. Chueh,Chun-Yen Chang +15 more
TL;DR: In this article, the first demonstration of quasi-antiferroelertic Hf 1-x Zr x O 2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec was presented.
Journal ArticleDOI
Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs
K.-T. Chen,K.-T. Chen,Y.-C. Chou,Gao Yu Siang,H.-Y. Chen,C. Lo,Chun Yu Liao,Shu-Tong Chang,Min-Hung Lee +8 more
TL;DR: In this article, both DC steps and AC pulse sweeps are applied to evaluate the switch response and establish a related model, and an improved sub-threshold swing is obtained using an AC pulse sweep due to its more stimulated charge for polarization by a multiple-pulse trigger.