T
Tuo-Hung Hou
Researcher at National Chiao Tung University
Publications - 196
Citations - 5924
Tuo-Hung Hou is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Non-volatile memory & High-κ dielectric. The author has an hindex of 34, co-authored 175 publications receiving 4422 citations. Previous affiliations of Tuo-Hung Hou include SEMATECH & Industrial Technology Research Institute.
Papers
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SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.
TL;DR: This paper proposes a novel ‘Simultaneous Logic in-Memory’ (SLIM) methodology which is complementary to existing LIM approaches in literature and demonstrates novel SLIM bitcells comprising non-filamentary bilayer analog OxRAM devices with NMOS transistors.
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Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
Journal ArticleDOI
SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
TL;DR: In this paper, the authors proposed a novel "simultaneous logic in-memory" (SLIM) methodology that allows to implement both memory and logic operations simultaneously on the same bitcell in a non-destructive manner without losing the previously stored Memory state.
Journal ArticleDOI
Electrode dependence of filament formation in HfO2 resistive-switching memory
TL;DR: In this paper, the authors investigated bipolar and non-polar resistive-switching of HfO2 with various metal electrodes and found that the composition of conducting filaments strongly depends upon the metal electrodes.
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Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications
TL;DR: In this article, a bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal insulator-metal structure.