Karsten Horn

TL;DR: In this paper, the authors describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission.

TL;DR: The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis and produces monolayer graphene films with much larger domain sizes than previously attainable.

TL;DR: In this paper, angle-resolved photoemission spectroscopy was used to show that electron-plasmon coupling plays an unusually strong role in renormalizing the bands around the Dirac crossing energy, analogous to mass renormalization by electron-boson coupling in ordinary metals.

Abstract: The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the {pi} bands and their characteristic splitting, and find the transition from two-dimensional to bulk character for 1 to 4 layers of graphene by angle-resolved photoemission. By detailed measurements of the {pi} bands we derive the stacking order, layer-dependent electron potential, screening length and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.

TL;DR: Ohta et al. as mentioned in this paper derived the stacking order, layer-dependent electron potential, screening length and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.