Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

The rise of graphene

There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

/pdf/the-electronic-properties-of-graphene-2siyzsnf5w.pdf

The electronic properties of graphene

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Raman monitoring of ternary compound formation: ZnSxSe1 − x on GaAs(100)

The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centered cubic to the bulk body-centered tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formations of quantum well states in films thicker than 2 ML.

/pdf/influence-of-the-substrate-lattice-structure-on-the-4wyriof0wb.pdf

Influence of the substrate lattice structure on the formation of Quantum Well States in thin In and Pb films on silicon

The deposition of submonolayer quantities of Cs onto GaP(110) causes strong photoemission features in the region of the semiconductor fundamental band gap. This observation is interpreted in terms of emission from a hybrid state caused by the interaction of the Cs 6s level with the unoccupied dangling-bond state. This hybrid state has long been postulated in descriptions of the metal-semiconductor surface bond, and is responsible for the pinning of the Fermi level. The absence of dispersion in the state suggests that Cs/GaP(110) represents a realization of a Mott-Hubbard insulator, by comparison with results from other alkali-metal/compound-semiconductor systems. \textcopyright{} 1996 The American Physical Society.

Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning.

The model surface Si(111)-( I x 1 ):H is used as a substrate for the adsorption of submonolayer amounts of Li. For n-doped substrates a peak right at the conduction band minimum is found in photoemission spectra. The peakis absent if the experiment is conducted on p-type substrates. Density functional theory calculations for different adsorption sites correlate this peak in the conduction band with Li adsorption in a H3 site of the Si(111)-(1×1):H surface. Experiment and theory show that the binding energy of the spectral feature is independent of the Li coverage. The absence of the structure for p-type substrates suggests a doping dependence of the adsorption site for Li on Si(111)-(I × 1):H.

/pdf/influence-of-bulk-doping-type-on-the-li-adsorption-site-on-2hu1euv5cl.pdf

Karsten Horn

Papers

Raman monitoring of ternary compound formation: ZnSxSe1 − x on GaAs(100)

Influence of the substrate lattice structure on the formation of Quantum Well States in thin In and Pb films on silicon

Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning.

Influence of bulk doping type on the Li adsorption site on Si(111)-(1x1): H

Electronic and surfactant effects of As interlayers at Ag/InP(110) interfaces