Metal halide perovskite solar cells (PSCs) are an emerging photovoltaic technology with the potential to disrupt the mature silicon solar cell market. Great improvements in device performance over the past few years, thanks to the development of fabrication protocols1-3, chemical compositions4,5 and phase stabilization methods6-10, have made PSCs one of the most efficient and low-cost solution-processable photovoltaic technologies. However, the light-harvesting performance of these devices is still limited by excessive charge carrier recombination. Despite much effort, the performance of the best-performing PSCs is capped by relatively low fill factors and high open-circuit voltage deficits (the radiative open-circuit voltage limit minus the high open-circuit voltage)11. Improvements in charge carrier management, which is closely tied to the fill factor and the open-circuit voltage, thus provide a path towards increasing the device performance of PSCs, and reaching their theoretical efficiency limit12. Here we report a holistic approach to improving the performance of PSCs through enhanced charge carrier management. First, we develop an electron transport layer with an ideal film coverage, thickness and composition by tuning the chemical bath deposition of tin dioxide (SnO2). Second, we decouple the passivation strategy between the bulk and the interface, leading to improved properties, while minimizing the bandgap penalty. In forward bias, our devices exhibit an electroluminescence external quantum efficiency of up to 17.2 per cent and an electroluminescence energy conversion efficiency of up to 21.6 per cent. As solar cells, they achieve a certified power conversion efficiency of 25.2 per cent, corresponding to 80.5 per cent of the thermodynamic limit of its bandgap.

Efficient perovskite solar cells via improved carrier management

A major efficiency limit for solution-processed perovskite optoelectronic devices, for example light-emitting diodes, is trap-mediated non-radiative losses. Defect passivation using organic molecul ...

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Rational molecular passivation for high-performance perovskite light-emitting diodes

Beyond the unprecedented success achieved in photovoltaics (PVs), lead halide perovskites (LHPs) have shown great potential in other optoelectronic devices. Among them, nanometer-scale perovskite quantum dots (PQDs) with fascinating optical properties including high brightness, tunable emission wavelength, high color purity, and high defect tolerance have been regarded as promising alternative down-conversion materials in phosphor-converted light-emitting diodes (pc-LEDs) for lighting and next-generation of display technology. Despite the promising applications of perovskite materials in various fields, they have received strong criticism for the lack of stability. The poor stability has also attracted much attention. Within a few years, numerous strategies towards enhancing the stability have been developed. This review summarizes the mechanisms of intrinsic- and extrinsic-environment-induced decomposition of PQDs. Simultaneously, the strategies for improving the stability of PQDs are reviewed in detail, which can be classified into four types: (1) compositional engineering; (2) surface engineering; (3) matrix encapsulation; (4) device encapsulation. Finally, the challenges for applying PQDs in pc-LEDs are highlighted, and some possible solutions to improve the stability of PQDs together with suggestions for further improving the performance of pc-LEDs as well as the device lifetime are provided.

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An overview on enhancing the stability of lead halide perovskite quantum dots and their applications in phosphor-converted LEDs

Photovoltaic solar cells based on metal halide perovskites have gained considerable attention over the past decade because of their potentially low production cost, earth-abundant raw materials, ease of fabrication and ever-increasing power conversion efficiencies of up to 25.2%. This type of solar cells offers the promise of generating electricity at a more competitive unit price than traditional fossil fuels by 2035. Nevertheless, the best research cell efficiencies are still below the theoretical limit defined by the Shockley-Queissier theory owing to the presence of non-radiative recombination losses. In this Review, we analyse the predominant pathways that contribute to non-radiative recombination losses in perovskite solar cells, and evaluate their impact on device performance. We then discuss how non-radiative recombination losses can be estimated through reliable characterization techniques, and highlight some notable advances in mitigating these losses, which hint at pathways towards defect-free perovskite solar cells. Finally, we outline directions for future work that will push the efficiency of perovskite solar cells towards the radiative limit.

Minimizing non-radiative recombination losses in perovskite solar cells

Metal halide perovskites have shown promising optoelectronic properties suitable for light-emitting applications. The development of perovskite light-emitting diodes (PeLEDs) has progressed rapidly over the past several years, reaching high external quantum efficiencies of over 20%. In this Review, we focus on the key requirements for high-performance PeLEDs, highlight recent advances on materials and devices, and emphasize the importance of reliable characterization of PeLEDs. We discuss possible approaches to improve the performance of blue and red PeLEDs, increase the long-term operational stability and reduce toxicity hazards. We also provide an overview of the application space made possible by recent developments in high-efficiency PeLEDs. The development of perovskite emitters, their use in light-emitting devices, and the challenges in enhancing the efficiency and stability, as well as reducing the potential toxicity of this technology are discussed in this Review.

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Metal halide perovskites for light-emitting diodes.

Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1–3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4–8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively—still well behind the performance of organic LEDs10–12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device—an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display. A strategy for managing the compositional distribution in metal halide perovskite light-emitting diodes enables them to surpass 20% external quantum efficiency—a step towards their practical application in lighting and displays.

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Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

Light-emitting diodes (LEDs) based on perovskite quantum dots have shown external quantum efficiencies (EQEs) of over 23% and narrowband emission, but suffer from limited operating stability1. Reduced-dimensional perovskites (RDPs) consisting of quantum wells (QWs) separated by organic intercalating cations show high exciton binding energies and have the potential to increase the stability and the photoluminescence quantum yield2,3. However, until now, RDP-based LEDs have exhibited lower EQEs and inferior colour purities4–6. We posit that the presence of variably confined QWs may contribute to non-radiative recombination losses and broadened emission. Here we report bright RDPs with a more monodispersed QW thickness distribution, achieved through the use of a bifunctional molecular additive that simultaneously controls the RDP polydispersity while passivating the perovskite QW surfaces. We synthesize a fluorinated triphenylphosphine oxide additive that hydrogen bonds with the organic cations, controlling their diffusion during RDP film deposition and suppressing the formation of low-thickness QWs. The phosphine oxide moiety passivates the perovskite grain boundaries via coordination bonding with unsaturated sites, which suppresses defect formation. This results in compact, smooth and uniform RDP thin films with narrowband emission and high photoluminescence quantum yield. This enables LEDs with an EQE of 25.6% with an average of 22.1 ±1.2% over 40 devices, and an operating half-life of two hours at an initial luminance of 7,200 candela per metre squared, indicating tenfold-enhanced operating stability relative to the best-known perovskite LEDs with an EQE exceeding 20%1,4–6. The efficiency and operating lifetimes of perovskite light-emitting diodes is improved by using a fluorinated triphenylphosphine oxide additive to control the cation diffusion during film deposition and passivate the surface.

Distribution control enables efficient reduced-dimensional perovskite LEDs.

Recently, low-bandgap formamidinium lead iodide FAPbI3-based perovskites are of particular interest for high-performance perovskite solar cells (PSCs) due to their broad spectral response and high photocurrent output. However, to inhibit the spontaneous α-to-δ phase transition, 15-17% (molar ratio) of bromide and cesium or methylammonium incorporated into the FAPbI3 are indispensable to achieve efficient PSCs. In return, the high bromide content will increase bandgap and narrow the spectral response region. If simply reducing the bromide content, the corresponding PSCs exhibit inferior operational stability due to α-to-δ phase transition, interface degradation, and halide migration. Herein, we report a CsPbBr3-cluster assisted vertically bottom-up crystallization approach to fabricate low-bromide (1% ∼ 6%), α-phase pure, and MA-free FAPbI3-based PSCs. The clusters, in the size of several nanometers, could act as nuclei to facilitate vertical growth of high quality α-FAPbI3 perovskite crystals. Moreover, these clusters can show further intake by perovskite after thermal annealing, which improves the phase homogeneity of the as-prepared perovskite films. As a result, the corresponding mesoporous PSCs deliver a champion efficiency of 21.78% with photoresponse extended to 830 nm. Moreover, these devices show remarkably improved operational stability, retaining ∼82% of the initial efficiency after 1,000 h of maximum power point tracking under 1 sun condition.

Efficient and Stable Low-Bandgap Perovskite Solar Cells Enabled by a CsPbBr3-Cluster Assisted Bottom-up Crystallization Approach.

Hole transporting material (HTM) free carbon-based perovskite solar cells (C-PSCs) are one kind of promising candidates for new generation photovoltaic technology due to their superior long-term stability and low cost. However, the power conversion efficiency (PCE) of C-PSCs is significantly lower than that of HTM-based PSCs. This is mostly due to the unexpected electron recombination happening at the interface of perovskite/carbon. Moreover, the low conductivity of the carbon electrode slows down the charge collection process and results in a low fill factor and poor PCE. To address these concerns, we firstly inserted an inorganic CuSCN HTM between the perovskite and the carbon electrode to suppress the electron recombination process. Then we used a highly conductive carbon nanotube (CNT) network to form a robust interface of CuSCN/CNT and facilitate the hole collection process. As a result, the updated CuSCN and CNT incorporated C-PSCs exhibit a VOC of 1.01 V and deliver a PCE up to 17.58% (measured in the backward scan) with pretty good reproducibility, which is the highest PCE in C-PSCs. What's more, the incorporation of CuSCN can also improve the stability of devices dramatically. The optimized device shows superior operational stability, retaining over 80% of its initial performance after 1000 h of continuous one sun illumination.

Kebin Lin

Papers

Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

Distribution control enables efficient reduced-dimensional perovskite LEDs.

Efficient and Stable Low-Bandgap Perovskite Solar Cells Enabled by a CsPbBr3-Cluster Assisted Bottom-up Crystallization Approach.

Efficient and stable carbon-based perovskite solar cells enabled by the inorganic interface of CuSCN and carbon nanotubes

Interfacial Bridge Using a cis‐Fulleropyrrolidine for Efficient Planar Perovskite Solar Cells with Enhanced Stability