K
Kiran Saba
Researcher at Polish Academy of Sciences
Publications - 15
Citations - 135
Kiran Saba is an academic researcher from Polish Academy of Sciences. The author has contributed to research in topics: Diode & Quantum efficiency. The author has an hindex of 7, co-authored 13 publications receiving 112 citations. Previous affiliations of Kiran Saba include Ghulam Ishaq Khan Institute of Engineering Sciences and Technology.
Papers
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Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer
TL;DR: In this article, a green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510nm, and the proposed structure has significantly reduced electrostatic field in the active region.
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Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes
TL;DR: In this paper, the effect of electromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses.
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Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
Muhammad Usman,Kiran Saba,Dong-Pyo Han,Nazeer Muhammad,Shabieh Farwa,Rafique Muhammad,Tanzila Saba +6 more
TL;DR: In this paper, the degradation effect of the built-in polarization field on the internal quantum efficiency (IQE) of vertical light-emitting diodes is investigated. And the effect has been dominant in vertical MQW case.
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Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes
TL;DR: In this paper, a second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented.
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Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region
TL;DR: In this paper, a variable active region consisting of quantum wells with increasing thickness and quantum barriers with decreasing thickness was proposed to improve the performance of green InGaN-based light-emitting diodes.