K
Kiyotaka Tsuji
Researcher at Panasonic
Publications - 32
Citations - 870
Kiyotaka Tsuji is an academic researcher from Panasonic. The author has contributed to research in topics: Layer (electronics) & Semiconductor memory. The author has an hindex of 9, co-authored 31 publications receiving 820 citations.
Papers
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Proceedings ArticleDOI
Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
Zhiqiang Wei,Yoshihiko Kanzawa,Koji Arita,Yoshikazu Katoh,Ken Kawai,S. Muraoka,Satoru Mitani,S. Fujii,Koji Katayama,Mitsuteru Iijima,Takumi Mikawa,Takeki Ninomiya,Ryoko Miyanaga,Yoshio Kawashima,Kiyotaka Tsuji,Atsushi Himeno,Takashi Okada,Ryotaro Azuma,Kazuhiko Shimakawa,H. Sugaya,Takeshi Takagi,R. Yasuhara,K. Horiba,Hiroshi Kumigashira,Masaharu Oshima +24 more
TL;DR: Highly reliable TaOx ReRAM has been successfully demonstrated, showing stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC and stable high and low resistance states based on the redox reaction mechanism.
Journal ArticleDOI
An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput
Akifumi Kawahara,Ryotaro Azuma,Yuuichirou Ikeda,Ken Kawai,Yoshikazu Katoh,Kouhei Tanabe,Toshihiro Nakamura,Yoshihiko Sumimoto,Naoki Yamada,Nobuyuki Nakai,Shoji Sakamoto,Yukio Hayakawa,Kiyotaka Tsuji,Shinichi Yoneda,Atsushi Himeno,Kenichi Origasa,Kazuhiko Shimakawa,Takeshi Takagi,Takumi Mikawa,Kunitoshi Aono +19 more
TL;DR: An 8-Mb multi-layered cross-point resistive RAM (ReRAM) macro has been developed with 443 MB/s write throughput (64-bits parallel write per 17.2-ns cycle), which is almost twice as fast as competing methods.
Patent
Nonvolatile memory element, and nonvolatile memory device
TL;DR: In this article, a nonvolatile memory element including a resistance variable element was configured to reversibly change between a low-resistance state and a high-resence state in response to electric signals with different polarities.
Patent
Nonvolatile semiconductor memory device and read method for the same
TL;DR: In this article, a cross point nonvolatile memory device capable of suppressing sneak-current-caused reduction in sensitivity of detection of a resistance value of a memory element is provided.
Patent
Non-volatile semiconductor memory device and manufacturing method thereof
TL;DR: A nonvolatile memory device comprises a plurality of memory cell holes (101 ) formed through an interlayer insulating layer ( 80 ) at respective cross points of a plurality-of-first wires (10 and 20 ) of a stripe shape when viewed from above such that the memory cell hole exposes upper surfaces of the plurality of first wires, respectively, a dummy hole ( 111 ) formed on the first wires in the inter-layer insulator layer such that dummy holes reach the upper surfaces.