Let there be light–to change the world we want to be! Over the past several decades, and ever since the birth of the first laser, mankind has witnessed the development of the science of light, as light-based technologies have revolutionarily changed our lives. Needless to say, photonics has now penetrated into many aspects of science and technology, turning into an important and dynamically changing field of increasing interdisciplinary interest. In this inaugural issue of eLight, we highlight a few emerging trends in photonics that we think are likely to have major impact at least in the upcoming decade, spanning from integrated quantum photonics and quantum computing, through topological/non-Hermitian photonics and topological insulator lasers, to AI-empowered nanophotonics and photonic machine learning. This Perspective is by no means an attempt to summarize all the latest advances in photonics, yet we wish our subjective vision could fuel inspiration and foster excitement in scientific research especially for young researchers who love the science of light.

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Highlighting photonics: looking into the next decade

This review traces nanocrystal quantum dot (QD) research from the early discoveries to the present day and into the future. We describe the extensive body of theoretical and experimental knowledge that comprises the modern science of QDs. Indeed, the spatial confinement of electrons, holes, and excitons in nanocrystals, coupled with the ability of modern chemical synthesis to make complex designed structures, is today enabling multiple applications of QD size-tunable electronic and optical properties.

Nanocrystal Quantum Dots: From Discovery to Modern Development.

Light detection and ranging (LiDAR) technology, a laser-based imaging technique for accurate distance measurement, is considered one of the most crucial sensor technologies for autonomous vehicles, artificially intelligent robots and unmanned aerial vehicle reconnaissance. Until recently, LiDAR has relied on light sources and detectors mounted on multiple mechanically rotating optical transmitters and receivers to cover an entire scene. Such an architecture gives rise to limitations in terms of the imaging frame rate and resolution. In this Review, we examine how novel nanophotonic platforms could overcome the hardware restrictions of existing LiDAR technologies. After briefly introducing the basic principles of LiDAR, we present the device specifications required by the industrial sector. We then review a variety of LiDAR-relevant nanophotonic approaches such as integrated photonic circuits, optical phased antenna arrays and flat optical devices based on metasurfaces. The latter have already demonstrated exceptional functional beam manipulation properties, such as active beam deflection, point-cloud generation and device integration using scalable manufacturing methods, and are expected to disrupt modern optical technologies. In the outlook, we address the upcoming physics and engineering challenges that must be overcome from the viewpoint of incorporating nanophotonic technologies into commercially viable, fast, ultrathin and lightweight LiDAR systems.

Nanophotonics for light detection and ranging technology

Recent Progresses in Electrochemical Carbon Dioxide Reduction on Copper-Based Catalysts toward Multicarbon Products

An optoelectronic oscillator (OEO) is a microwave photonic system that produces microwave signals with ultralow phase noise using a high-quality-factor optical energy storage element. This type of oscillator is desired in various practical applications, such as communication links, signal processing, radar, metrology, radio astronomy, and reference clock distribution. Recently, new mode control and selection methods based on Fourier domain mode-locking and parity-time symmetry have been proposed and experimentally demonstrated in OEOs, which overcomes the long-existing mode building time and mode selection problems in a traditional OEO. Due to these mode control and selection methods, continuously chirped microwave waveforms can be generated directly from the OEO cavity and single-mode operation can be achieved without the need of ultranarrowband filters, which are not possible in a traditional OEO. Integrated OEOs with a compact size and low power consumption have also been demonstrated, which are key steps toward a new generation of compact and versatile OEOs for demanding applications. We review recent progress in the field of OEOs, with particular attention to new mode control and selection methods, as well as chip-scale integration of OEOs.

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Recent advances in optoelectronic oscillators

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. The goal1 of achieving efficient light emission from group-IV materials in silicon technology has been elusive for decades2–6. Here we demonstrate efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys. We measure a sub-nanosecond, temperature-insensitive radiative recombination lifetime and observe an emission yield similar to that of direct-bandgap group-III–V semiconductors. Moreover, we demonstrate that, by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned over a broad range, while preserving the direct bandgap. Our experimental findings are in excellent quantitative agreement with ab initio theory. Hexagonal SiGe embodies an ideal material system in which to combine electronic and optoelectronic functionalities on a single chip, opening the way towards integrated device concepts and information-processing technologies. A hexagonal (rather than cubic) alloy of silicon and germanium that has a direct (rather than indirect) bandgap emits light efficiently across a range of wavelengths, enabling electronic and optoelectronic functionalities to be combined on a single chip.

Direct-bandgap emission from hexagonal Ge and SiGe alloys

A lossless solar cell operating at the Shockley–Queisser limit generates an open circuit voltage (Voc) equal to the radiative limit. At Voc, the highly directional beam of photons from the sun is absorbed and subsequently externally re-emitted into a 4π solid angle, providing a large photon entropy loss. A solar cell can beat the Shockley–Queisser limit and approach the 46.7% ultimate limit by decreasing the output solid angle of the light emission at open circuit conditions. Here, a design for an indium phosphide single nanowire solar cell capable to operate 159 mV above the radiative limit is presented. The spontaneous emission factor is first optimized into a guided mode of the nanowire toward 68%. The authors subsequently launch a guided mode at the bottom straight part of the tapered nanowire yielding a photon escape probability of 81% for a tapering angle of θ = 1.2° and a top facet with a radius of 83 nm. When assuming homogeneous light emission along the nanowire, an outcoupling efficiency of 42% of the emitted light is obtained. The final optimization is the reduction of the emission cone toward 11 × 10−3 sr by focusing the guided mode with an external lens.

https://www.onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202001636

Ksenia Korzun

Papers

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Nanowire Solar Cell Above the Radiative Limit