Julian Stangl

TL;DR: Here it is demonstrated a possibility to use such inexpensive semiconductors for sensitive detection of X-ray photons by direct photon-to-current conversion and a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms.

TL;DR: In this paper, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined from high-resolution X-ray diffraction, and the structure of III-V nanowires is analyzed.

TL;DR: Efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys is demonstrated, enabling electronic and optoelectronic functionalities to be combined on a single chip and in excellent quantitative agreement with ab initio theory.

TL;DR: By combining a series of growth experiments using metal−organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, this work gains deeper insight into nucleation and growth of self-seeded III−V nanowires.

TL;DR: A convenient, aqueous-based synthesis of stable HgTe nanocrystals with widely size-tunable room temperature emission between wavelengths of 1.2 to 3.7 mum is demonstrated and the use of mercaptoethylamine as initial stabilizer is greatly improved.