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Alain Dijkstra
Researcher at Eindhoven University of Technology
Publications - 16
Citations - 541
Alain Dijkstra is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Direct and indirect band gaps & Photoluminescence. The author has an hindex of 7, co-authored 16 publications receiving 361 citations.
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Journal ArticleDOI
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Elham M. T. Fadaly,Alain Dijkstra,Jens Renè Suckert,Dorian Ziss,M. A. J. V. Tilburg,Chenyang Mao,Yizhen Ren,V. T. V. Lange,Ksenia Korzun,Sebastian Kölling,Sebastian Kölling,Marcel A. Verheijen,D. Busse,Claudia Rödl,Jürgen Furthmüller,Friedhelm Bechstedt,Julian Stangl,Jonathan J. Finley,Silvana Botti,Jos E. M. Haverkort,Erik P. A. M. Bakkers +20 more
TL;DR: Efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys is demonstrated, enabling electronic and optoelectronic functionalities to be combined on a single chip and in excellent quantitative agreement with ab initio theory.
Journal ArticleDOI
Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
Elham M. T. Fadaly,Alain Dijkstra,Jens Renè Suckert,Dorian Ziss,M. A. J. V. Tilburg,C. Mao,Yizhen Ren,V. T. V. Lange,Sebastian Kölling,Marcel A. Verheijen,D. Busse,C. Rödl,Jürgen Furthmüller,Friedhelm Bechstedt,Julian Stangl,Jonathan J. Finley,Silvana Botti,Jos E. M. Haverkort,Erik P. A. M. Bakkers +18 more
TL;DR: In this article, the authors demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys, and demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range.
Journal ArticleDOI
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
Simone Assali,Alain Dijkstra,Ang Li,Ang Li,Ang Li,Sebastian Koelling,Marcel A. Verheijen,Marcel A. Verheijen,Luca Gagliano,N. von den Driesch,Dan Buca,PM Paul Koenraad,Jos E. M. Haverkort,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers +14 more
TL;DR: Direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.
Journal ArticleDOI
Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 μm room-temperature optical emission
TL;DR: In this paper, the authors demonstrate that multilayer growth with a gradual increase in composition is an effective process to minimize bulk and surface segregation and eliminate phase separation during epitaxy yielding a uniform Sn incorporation up to ∼18
Journal ArticleDOI
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters.
Michael S. Seifner,Alain Dijkstra,Johannes Bernardi,Andreas Steiger-Thirsfeld,Masiar Sistani,Alois Lugstein,Jos E. M. Haverkort,Sven Barth,Sven Barth +8 more
TL;DR: Temperature and laser power dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge0.81Sn0.19 (e.g. band gap of 0.3 eV at room temperature).