Journal ArticleDOI
New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
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TLDR
In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.Abstract:
We demonstrate a novel 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs. Intersubband resonance radiation excites an electron from the ground state into the first excited state, where it rapidly tunnels out producing a photocurrent. We achieve a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.read more
Citations
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Journal ArticleDOI
Nanostructured Photodetectors: From Ultraviolet to Terahertz.
TL;DR: Recent advances in nanoscale photodetectors constructed by diverse low-dimensional nanostructured materials are discussed here; meanwhile, challenges and promising future directions in this research field are proposed.
Journal ArticleDOI
Model system for optical nonlinearities: Asymmetric quantum wells.
Emmanuel Rosencher,Ph. Bois +1 more
TL;DR: Large absorptions have been observed for the first time in GaAs/AlGaAs multiquantum wells (MQW) by West and Eglash by noting the dipole matrix elements associated to these intersubband transitions (ISBT) have the same order of magnitude as the quantum well width leading to extremely large absorption.
Journal ArticleDOI
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
Mingsheng Long,Anyuan Gao,Peng Wang,Hui Xia,Claudia Ott,Chen Pan,Yajun Fu,Erfu Liu,Xiaoshuang Chen,Wei Lu,Tom Nilges,Jianbin Xu,Xiaomu Wang,Weida Hu,Feng Miao +14 more
TL;DR: The authors' van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.
Journal ArticleDOI
Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field
Doyeol Ahn,Shun Lien Chuang +1 more
TL;DR: In this article, the authors calculate the electric field dependence of the linear and the third-order nonlinear intersubband optical absorption coefficients of a semiconductor quantum well in the infrared regime.
Journal ArticleDOI
High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
TL;DR: In this article, a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm was used to achieve a blackbody detectivity of 1.0×1010 cm (Hz) 1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.
References
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Journal ArticleDOI
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West,S. J. Eglash +1 more
TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Book
Principles of Electron Tunneling Spectroscopy: Second Edition
TL;DR: In this article, the authors provide up-to-date treatment of solid state electron tunnelling phenomena, with emphasis on their application in probing the electronic and vibrational properties of superconductors, normal metals, semiconductors, and thin insulating barrier layers.
Journal ArticleDOI
New Transport Phenomenon in a Semiconductor "Superlattice"
Leo Esaki,Leland Chang +1 more
TL;DR: In this article, the authors report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy.
Journal ArticleDOI
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
TL;DR: In this article, a simple expression for the low field mobility in the miniband conduction regime is derived; localization effects, hopping conduction, and effective mass filtering are discussed.
Journal ArticleDOI
Direct observation of ballistic transport in GaAs.
TL;DR: In this paper, the authors present the first direct evidence of hot electrons traversing ballistically a thin GaAs layer, with the use of a tunneling hot-electron-transfer amplifier as an electron spectrometer.
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First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
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