L
Larry R. Hite
Researcher at Texas Instruments
Publications - 12
Citations - 299
Larry R. Hite is an academic researcher from Texas Instruments. The author has contributed to research in topics: Very-large-scale integration & Single event upset. The author has an hindex of 7, co-authored 12 publications receiving 299 citations.
Papers
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Patent
SRAM with local interconnect
TL;DR: In this article, an SRAM using TiN local interconnects was proposed to reduce the moat parasitic capacitance and avoid the use of metal jumpers, resulting in increased density.
Journal ArticleDOI
Titanium nitride local interconnect technology for VLSI
TL;DR: In this paper, the self-aligned titanium disilicide process is used to reduce MOS gate and junction sheet resistances to less than 1 Ω/square, and a layer of local interconnect for VLSI CMOS applications.
Journal ArticleDOI
An SEU resistant 256 K SOI SRAM
TL;DR: In this article, a single event upset resistant SRAM (static random access memory) cell has been implemented in a 256 K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 degrees C.
Patent
Method of making silicon on insalator material using oxygen implantation
TL;DR: In this paper, the authors described a semiconductor on annealed material, which was formed by implanting ions which formed an insulating layer beneath the surface of a crystalline semiconductor substrate.
Patent
MOS analog multiplier
TL;DR: In this article, a four quadrant multiplier with a pair of MOSFET differential amplifiers formed with MOS-FET current sources for both amplifiers is considered, where current through one FET and a second FET of each amplifier are modulated in response to second multiplier input voltages 180° out of phase.