L
Liang Ding
Researcher at National University of Defense Technology
Publications - 170
Citations - 2334
Liang Ding is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Thin film & Computer science. The author has an hindex of 22, co-authored 152 publications receiving 1782 citations. Previous affiliations of Liang Ding include University of Texas–Pan American & Nanyang Technological University.
Papers
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Proceedings ArticleDOI
Germanium electro-absorption modulator for power efficient optical links
TL;DR: In this article, a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 µm 2 giving an extinction ratio of ∼10 dB for a wavelength range of 1580 - 1610 nm was reported.
Book ChapterDOI
Combining Domain Knowledge and Deep Learning Makes NMT More Adaptive
TL;DR: A novel domain adaptive approach to annotate Chinese sentences with CLCN (Chinese Library Classification Number) as the domain labels is proposed, which achieves an average 1.3 BLEU score improvement (5.4% relative), which demonstrates the feasibility and validity of proposed approach.
Journal ArticleDOI
Temperature dependence of current transport in Al/Al2O3 nanocomposite thin films
TL;DR: In this paper, Al/Al2O3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure.
Proceedings ArticleDOI
Process integration of solder bumps and Cu pillar microbumps on 2.5D fine pitch TSV interposer
Sharon Lim Pei-Siang,Liang Ding,Mingbin Yu,Mian Zhi Ding,Sorono Dexter Velez,Vempati Srinivasa Rao +5 more
TL;DR: In this paper, the authors describe the assembly process and challenges of the 100μm thin 2.5D TSV Si interposer to the test substrate and the assembly of three different test chips onto TSV si interposers using capillary underfill and WL-UF.
Journal ArticleDOI
Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation
TL;DR: In this article, the photoluminescence (PL) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted.