There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

Nonlinear photonic chips can generate and process signals all-optically with far superior performance to that possible electronically — particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunication wavelengths poses a fundamental limitation. We review recent progress in non-silicon CMOS-compatible platforms for nonlinear optics, with a focus on Si3N4 and Hydex®. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement. We highlight their potential future impact as well as the challenges to achieving practical solutions for many key applications. This article reviews recent progress in the use of silicon nitride and Hydex as non-silicon-based CMOS-compatible platforms for nonlinear optics. New capabilities such as on-chip optical frequency comb generation, ultrafast optical pulse generation and measurement using these materials, and their potential future impact and challenges are covered.

New CMOS-compatible platforms based on silicon nitride and hydex for nonlinear optics

This Review discusses the emerging field of mid-infrared frequency comb generation, including technologies based on novel laser gain media, nonlinear frequency conversion and microresonators, as well as the applications of these combs in precision spectroscopy and direct frequency comb spectroscopy. Laser frequency combs are coherent light sources that emit a broad spectrum of discrete, evenly spaced narrow lines whose absolute frequency can be measured to within the accuracy of an atomic clock. Their development in the near-infrared and visible domains has revolutionized frequency metrology while also providing numerous unexpected opportunities in other fields such as astronomy and attosecond science. Researchers are now exploring how to extend frequency comb techniques to the mid-infrared spectral region. Versatile mid-infrared frequency comb generators based on novel laser gain media, nonlinear frequency conversion or microresonators promise to significantly expand the applications of frequency combs. In particular, novel approaches to molecular spectroscopy in the 'fingerprint region', with dramatically improved precision, sensitivity, recording time and/or spectral bandwidth may lead to new discoveries in the various fields relevant to molecular science.

Mid-infrared frequency combs

The nonlinearities in silicon are diverse. This Review covers the wealth of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics. The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.

Nonlinear silicon photonics

Focus Serial: Frontiers of Nonlinear Optics Chalcogenide glasses offer large ultrafast third-order nonlinearities, low two-photon absorption and the absence of free carrier absorption in a photosensitive medium. This unique combination of properties is nearly ideal for all-optical signal processing devices. In this paper we review the key properties of these materials, outline progress in the field and focus on several recent highlights: high quality gratings, signal regeneration, pulse compression and wavelength conversion.

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Ultrafast all-optical chalcogenide glass photonic circuits

We demonstrate low-threshold supercontinuum generated in a highly nonlinear arsenic selenide chalcogenide nanowire with tailored dispersion. The tapered submicrometer chalcogenide fiber exhibits an ultrahigh nonlinearity, n2~1.1×10−17m2/W and an effective mode area of 0.48 μm2, yielding an effective nonlinearity of γ~93.4W/m, which is over 80,000 times larger than standard silica single-mode fiber at a wavelength of ~1550nm. This high nonlinearity, in conjunction with the engineered anomalous dispersion, enables low-threshold soliton fission leading to large spectral broadening at a dramatically reduced peak power of several watts, corresponding to picojoule energy.

Low-threshold supercontinuum generation in highly nonlinear chalcogenide nanowires

We experimentally demonstrate enhanced Kerr nonlinear effects in highly nonlinear As2Se3 chalcogenide fiber tapered down to subwavelength waist diameter of 1.2 µm. Based on self phase modulation measurements, we infer an enhanced nonlinearity of 68 W-1m-1. This is 62,000 times larger than in standard silica singlemode fiber, owing to the 500 times larger n2 and almost 125 times smaller effective mode area. We also consider the potential to exploit the modified dispersion in these tapers for ultra-low threshold supercontinuum generation.

Enhanced Kerr nonlinearity in sub-wavelength diameter As2Se3 chalcogenide fiber tapers

http://ieeexplore.ieee.org/iel5/5757121/5757122/05758579.pdf

Enhanced Kerr Non-linearity in Sub-wavelength Diameter As2Se3 Chalcogenide Fibre Tapers

We investigate the feasibility of all-optical regeneration based on self-phase modulation in single mode As2Se3 chalcogenide fiber. By combining the chalcogenide fiber with a bandpass filter, we achieve a near step-like power transfer function with no pulse distortion. The device is shown to operate with 5.8 ps duration pulses, thus demonstrating the feasibility of this device operating with high bit-rate data signals. These results are achieved with pulse peak powers <10 W in a fully passive device, including only 2.8 m of chalcogenide fiber. We obtain an excellent agreement between theory and experiment and show that both the high nonlinearity of the chalcogenide glass along with its high normal dispersion near 1550 nm enables a significant device length reduction in comparison with silica-based devices, without compromise on the performance. We find that even for only a few meters of fiber, the large normal dispersion of the chalcogenide glass inhibits spectral oscillations that would appear with self-phase modulation alone. We measure the two photon absorption attenuation coefficient and find that it advantageously affects the device transfer function.

Libin Fu

Papers

Ultrafast all-optical chalcogenide glass photonic circuits

Low-threshold supercontinuum generation in highly nonlinear chalcogenide nanowires

Enhanced Kerr nonlinearity in sub-wavelength diameter As2Se3 chalcogenide fiber tapers

Enhanced Kerr Non-linearity in Sub-wavelength Diameter As2Se3 Chalcogenide Fibre Tapers

Investigation of self-phase modulation based optical regeneration in single mode As2Se3 chalcogenide glass fiber.