M. Chrysler

TL;DR: In this paper, the authors apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor.

TL;DR: In this article, the authors apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor.

TL;DR: The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.

TL;DR: In this article, the composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor-complex oxide heterostructures.

TL;DR: In this paper, the authors used SIMION® 8.1 to calculate the times of flight spectra of electrons leaving the sample surface with energies and angles dispersed according to distribution functions chosen to model the positron induced electron emission process and thus obtained an estimate of the true electron energy distribution.