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Band-gap engineering at a semiconductor - crystalline oxide interface
J. Moghadam,Kamyar Ahmadi-Majlan,Xuan Shen,Timothy C. Droubay,Mark Bowden,M. Chrysler,Dong Su,Scott A. Chambers,Joseph H. Ngai +8 more
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In this article, the authors apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor.Abstract:
The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr$_{x}$Ti$_{1-x}$O$_3$ and Ge, in which the band-gap of the former is enhanced with Zr content $x$. We present structural and electrical characterization of SrZr$_{x}$Ti$_{1-x}$O$_3$-Ge heterojunctions for $x$ = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I, with the latter being verified using photoemission measurements. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.read more
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A-site perovskite oxides: an emerging functional material for electrocatalysis and photocatalysis
Xue Li,Xue Li,Haitao Zhao,Jie Liang,Yonglan Luo,Guang Chen,Xifeng Shi,Siyu Lu,Shuyan Gao,Jianming Hu,Qian Liu,Xuping Sun +11 more
TL;DR: In this paper, the performance of A-site perovskite oxides (bimetallic, ternary metal, multimetallic and oxynitride) in electrocatalysis and photocatalysis is systematically discussed.
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Band Alignment Engineering at Cu2O/ZnO Heterointerfaces
Sebastian Siol,Jan C. Hellmann,S. David Tilley,Michael Graetzel,Jan Morasch,Jonas Deuermeier,Wolfram Jaegermann,Andreas Klein +7 more
TL;DR: It is demonstrated how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system.
Journal ArticleDOI
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
TL;DR: In this article, a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis, is presented.
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Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.
TL;DR: In this article, the influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices.
References
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Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches
TL;DR: In this paper, first-principles based calculations of the tunneling conductance and magnetoconductance of epitaxial ''mathrm{Fe}(100)|\mathm{MgO''(100), ''mgO''.
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Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
TL;DR: In this article, a method for locating the valence-band edge in x-ray photo-emission spectra is reported. But this method is not suitable for measuring semiconductor interface potentials.
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Crystalline Oxides on Silicon: The First Five Monolayers
TL;DR: In this paper, a metaloxide-semiconductor capacitor using SrTiO{sub 3} as an alternative to SiOthinsp{sub 2} yields the extraordinary result of t{sub eqlt}10 {Angstrom}.
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Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
TL;DR: A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors, is emerging from this approach to band-gap engineering.
Journal ArticleDOI
Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy
TL;DR: In this paper, an angle-resolved core-level and valence-band x-ray photo-electron spectroscopy (XPS) data for GaAs(110), Ge(110, and Ge(111) surfaces are analyzed to determine core level to valence band binding energy differences to a precision of the order of the room-temperature thermal energy.
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