M. Curtin

TL;DR: In this article, a defect-free germanium was demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls.

TL;DR: Growth of Ge thick layers with and without a low temperature Ge buffer has been investigated using reduced pressure chemical vapor deposition with emphasis on the evolution of surface morphology and its roughness as mentioned in this paper.

TL;DR: In this article, a low-defect-density Ge epitaxy was fabricated using aspect ratio trapping combined with epitaxial lateral overgrowth techniques, and then Ge was laterally grown to form 20 μm wide, 6 mm long strips.

TL;DR: In this paper, defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls.