M. D. Camras

Abstract: Data are presented showing that Zn diffusion into an AlAs‐GaAs superlattice (41 Lz∼45‐A GaAs layers, 40 LB∼150‐A AlAs layers), or into AlxGa1−xAs‐GaAs quantum‐well heterostructures, increases the Al‐Ga interdiffusion at the heterointerfaces and creates, even at low temperature (<600 °C), uniform compositionally disordered AlxGa1−xAs. For the case of the superlattice, the diffusion‐induced disordering causes a change from direct‐gap AlAs‐GaAs (Eg∼1.61 eV) to indirect‐gap AlxGa1−xAs (x∼0.77, EgX∼2.08 eV).

TL;DR: In this article, a 126-layer AlAs-GaAs superlattice has been shown to be selectively disordered by silicon implantation, where silicon ions, implanted at 375 keV and a dose of 1014 cm−2, yield a compositionally disordered region 0.33 μm thick centered 0.7 μm below the surface.

TL;DR: In this paper, a disk-shaped IR•red (Eg ∼ 1.61 eV) GaAs•AlAs superlattice laser is demonstrated to be monolithically integrated into rectangular yellow-gap AlxGa1−xAs [x∼LB/(Lz+LB), EgX∼2.08 eV] cavities.

TL;DR: In this paper, thermal annealing was used to modify the wavelength of a photopumped, low threshold AlxGa1−xAs quantum well heterostructure (QWH) laser from ∼8200 to ∼7300 A with a threshold change from 150 to 1700 W/cm2.

TL;DR: In this article, a continuous (cw) 300-k laser operation of a 66-period lower energy GaAs•InxGa1−xAs (x∼0.25) and a 128-period GaAs−InxPx•GaAs (∼ 0.2) superlattice (SL) was demonstrated.