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M

M. Jakšić

Publications -  94
Citations -  1246

M. Jakšić is an academic researcher. The author has contributed to research in topics: Ion beam & Diamond. The author has an hindex of 18, co-authored 94 publications receiving 1072 citations.

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New capabilities of the Zagreb ion microbeam system

TL;DR: The installation of a new 1.0 MV Tandetron accelerator and a recent upgrade of the 6.0 M Tandem Van de Graaff accelerator increased the application possibilities of the Zagreb ion microbeam system as discussed by the authors.
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Single-Photon Emitters in Lead-Implanted Single-Crystal Diamond

TL;DR: In this article, the creation and characterization of Pb-related color centers in diamond upon ion implantation and subsequent thermal annealing was reported. But their optical emission in the photoluminescence (PL) re...
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Photoluminescence of lead-related optical centers in single-crystal diamond

TL;DR: In this paper, the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing is reported, which is corroborated by the correlation of its intensity with the implantation fluence of pb ions, while none of the reported features is observed in reference samples implanted with C ions.
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Response of GaN to energetic ion irradiation: conditions for ion track formation

TL;DR: In this article, the response of wurzite GaN thin films to energetic ion irradiation was investigated using atomic force microscopy, grazing incidence small angle X-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis.
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Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

TL;DR: In this article, a method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions is described, which includes the deposition of semi-spherical gold contacts on the sample surface, followed by MeV ion implantation.