Handbook of Radioactivity Analysis

Microwave Semiconductor Devices

In0.53Ga0.47As PIN photodetectors were fabricated and their dark currents were measured. Based on the analysis of different mechanisms, a complete dark current model considering trap-assisted tunneling (TAT) mechanism under low and intermediate reverse bias is constructed by studying the electric fields and carrier generation-recombination rates. The obtained current–voltage experimental results under dark conditions are in good agreement with our simulation using this complete model. The contribution of each mechanism is investigated, and to evaluate the dominant factor deriving from Shockley–Read–Hall generation or TAT, a critical voltage (
 $$V_{cri}$$
 ) where $$I_{TAT} = I_{SRH} \approx 0.5I_{dark}$$
 is proposed. In addition, the effects of thickness and doping concentration of absorption layer on $$V_{cri}$$
 are discussed in detail, from which we demonstrate that $$I_{TAT}$$
 is the dominant component of dark current for those photodetectors operating under the reverse bias of 5 V if the thickness of absorption layer is less than 1 μm when the doping concentration is 1 × 1015 cm−3, or the doping concentration of absorption layer is more than 7 × 1015 cm−3 when the thickness is 2 μm. The effect of temperature on dark current due to TAT is also analyzed.

Analysis of dark current considering trap-assisted tunneling mechanism for InGaAs PIN photodetectors

Effect of light incident on the Si SDR IMPATT diode is investigated in this paper. The authors have used an IMPATT diode which is consists of p+, n+ (contact region), n-well region and p-sub region. Since the n-well region is used to be the drift region of the structure, the light is shined on the top of the layer through tiny hole created on the SiO2 layer. The results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the structure. The result of the electric field and mobility in those two conditions are also observed in this paper.

The Effect of IV Characteristics on Optical Control of SDR Si IMPATT Diode

In this paper, we present the simulation, evaluation and comparison of the dark current, spectral and frequency response, depending on type of material, absorption coefficient and the thickness of the intrinsic layer of PIN photodetectors, by finite element method. According to the results of the simulation, the GaAs and InP materials have more linear spectral response while InP has a higher gain and spectral response, while GaAs has a higher cutoff frequency related to the other material like Si, Ge, ZnSe and AlGaAs. Also, increasing of intrinsic layer thickness enhances the spectrum response and light current in the Si, Ge and ZnSe materials, but has small effect on InP and GaAs. Furthermore it decreases the frequency response in all materials above.

Simulation and evaluation of PIN photodetectors based on material and thickness of intrinsic layer

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.

Variable junction temperature analysis in Silicon IMPATT diode

Avalanche Photodiode based on InGaAs/InP was chosen because of the needs of high-speed optical receivers and have their own advantages on high sensitivity. In this project, we focused on the effect of guard ring on InGaAs/InP avalanche photodiodes and its performance. Two types of guard ring structures are designed in APD and their current-voltage (I-V) characteristics (electric field profiles) are simulated and analysed. This paper investigates the effects of guard-ring (GR) structures on the performance of InGaAs/InP avalanche photodiodes (APDs). Two type InGaAs/InP-APDs based on P+/N-well guard ring and n+/p-substrate guard ring are designed and their electric field profiles are simulated and analyzed. Current current-voltage characteristics (I-V characteristics) are measured and compared.

M. N. Hussain

Papers

Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

Variable junction temperature analysis in Silicon IMPATT diode

InGaAs/InP avalanche photodiode performance effect using variation guard ring structures

The Effect of IV Characteristics on Optical Control of SDR Si IMPATT Diode