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Madan Dubey

Researcher at United States Army Research Laboratory

Publications -  185
Citations -  15878

Madan Dubey is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Graphene & Electron mobility. The author has an hindex of 49, co-authored 185 publications receiving 13677 citations. Previous affiliations of Madan Dubey include United States Department of Defense.

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Two-dimensional material nanophotonics

TL;DR: In this article, the optical properties and applications of various two-dimensional materials including transition metal dichalcogenides are reviewed with an emphasis on nanophotonic applications, and two different approaches for enhancing their interactions with light: through their integration with external photonic structures, and through intrinsic polaritonic resonances.
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Integrated Circuits Based on Bilayer MoS2 Transistors

TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
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Synthesis Of Nitrogen-Doped Graphene Films For Lithium Battery Application

TL;DR: A controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique is demonstrated, making this a feasible and efficient process for integration into current battery manufacture technology.
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Silicene field-effect transistors operating at room temperature

TL;DR: A silicene field-effect transistor is reported, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1)‬s(-1), attributed to acoustic phonon-limited transport and grain boundary scattering.
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Tunable Transport Gap in Phosphorene

TL;DR: It is experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer, and the asymmetry of the electron and the hole current was found to be dependent on the layer thickness.