M
Madan Dubey
Researcher at United States Army Research Laboratory
Publications - 185
Citations - 15878
Madan Dubey is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Graphene & Electron mobility. The author has an hindex of 49, co-authored 185 publications receiving 13677 citations. Previous affiliations of Madan Dubey include United States Department of Defense.
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Two-dimensional material nanophotonics
TL;DR: In this article, the optical properties and applications of various two-dimensional materials including transition metal dichalcogenides are reviewed with an emphasis on nanophotonic applications, and two different approaches for enhancing their interactions with light: through their integration with external photonic structures, and through intrinsic polaritonic resonances.
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Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang,Lili Yu,Yi-Hsien Lee,Yi-Hsien Lee,Yumeng Shi,Allen Hsu,Matthew L. Chin,Lain-Jong Li,Madan Dubey,Jing Kong,Tomas Palacios +10 more
TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
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Synthesis Of Nitrogen-Doped Graphene Films For Lithium Battery Application
Arava Leela Mohana Reddy,Anchal Srivastava,Sanketh R. Gowda,Hemtej Gullapalli,Madan Dubey,Pulickel M. Ajayan +5 more
TL;DR: A controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique is demonstrated, making this a feasible and efficient process for integration into current battery manufacture technology.
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Silicene field-effect transistors operating at room temperature
Li Tao,Eugenio Cinquanta,Daniele Chiappe,Carlo Grazianetti,Marco Fanciulli,Madan Dubey,Alessandro Molle,Deji Akinwande +7 more
TL;DR: A silicene field-effect transistor is reported, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1)s(-1), attributed to acoustic phonon-limited transport and grain boundary scattering.
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Tunable Transport Gap in Phosphorene
TL;DR: It is experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer, and the asymmetry of the electron and the hole current was found to be dependent on the layer thickness.