M
Mahito Yamamoto
Researcher at Osaka University
Publications - 40
Citations - 2206
Mahito Yamamoto is an academic researcher from Osaka University. The author has contributed to research in topics: Graphene & Semiconductor. The author has an hindex of 17, co-authored 37 publications receiving 1835 citations. Previous affiliations of Mahito Yamamoto include National Institute for Materials Science & University of Maryland, College Park.
Papers
More filters
Journal ArticleDOI
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
Yen-Fu Lin,Yen-Fu Lin,Yong Xu,Sheng Tsung Wang,Song-Lin Li,Mahito Yamamoto,Alex Aparecido-Ferreira,Wenwu Li,Huabin Sun,Shu Nakaharai,Wen-Bin Jian,Keiji Ueno,Kazuhito Tsukagoshi +12 more
TL;DR: In this article, the authors report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed.
Journal ArticleDOI
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
Mahito Yamamoto,Sheng Tsung Wang,Mei-Yan Ni,Mei-Yan Ni,Yen-Fu Lin,Yen-Fu Lin,Song-Lin Li,Shinya Aikawa,Wen-Bin Jian,Keiji Ueno,Katsunori Wakabayashi,Kazuhito Tsukagoshi +11 more
TL;DR: The observations point to strong effects of dimensionality on the phonon properties of MoTe2, which shows a prominent peak of the in-plane E(1)2g mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides.
Journal ArticleDOI
Self-limiting layer-by-layer oxidation of atomically thin WSe2.
Mahito Yamamoto,Sudipta Dutta,Shinya Aikawa,Shu Nakaharai,Katsunori Wakabayashi,Michael S. Fuhrer,Michael S. Fuhrer,Keiji Ueno,Kazuhito Tsukagoshi +8 more
TL;DR: It is found that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped, offering a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices.
Journal ArticleDOI
Anisotropic Etching of Atomically Thin MoS2
TL;DR: In this paper, a triangular etch pit with uniform orientation on the surface of atomically thin molybdenum disulfide (MoS2) was shown to grow laterally with oxidation time, indicating anisotropic etching terminating on lattice planes.
Journal ArticleDOI
High-fidelity conformation of graphene to SiO2 topographic features.
William G. Cullen,Mahito Yamamoto,Kristen M. Burson,Jian-Hao Chen,Chaun Jang,Liang Li,Michael S. Fuhrer,Ellen D. Williams +7 more
TL;DR: Graphene conforms to the substrate down to the smallest features with nearly 99% fidelity, indicating conformal adhesion can be highly effective for strain engineering of graphene.