M
Makoto Ohkura
Researcher at Hitachi
Publications - 100
Citations - 1213
Makoto Ohkura is an academic researcher from Hitachi. The author has contributed to research in topics: Thin-film transistor & Substrate (electronics). The author has an hindex of 20, co-authored 100 publications receiving 1205 citations.
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Patent
Laser annealing apparatus, TFT device and annealing method of the same
Mikio Hongo,Sachio Uto,Mineo Nomoto,Toshihiko Nakata,Mutsuko Hatano,Shinya Yamaguchi,Makoto Ohkura +6 more
TL;DR: In this article, a laser beam is concentrated using an objective lens and radiated on amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beamhomogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using
Patent
Complementary MOS integrated circuits having vertical channel FETs
TL;DR: A semiconductor integrated circuit comprising semiconductor regions in the form of first and second protruding poles that are provided on a semiconductor layer formed on either an insulating substrate or an semiconductor substrate, is described in this article.
Patent
Semiconductor memory and method of producing the same
Hideo Sunami,Makoto Ohkura,Masanobu Miyao,Kikuo Kusukawa,Masahiro Moniwa,Shinichiro Kimura,Terunori Warabisako,Kure Tokuo +7 more
TL;DR: In this article, the side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area.
Patent
Display device, process of fabricating same, and apparatus for fabricating same
Mikio Hongo,Sachio Uto,Mineo Nomoto,Toshihiko Nakata,Mutsuko Hatano,Shinya Yamaguchi,Makoto Ohkura +6 more
TL;DR: In this article, the active region of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction.
Journal ArticleDOI
Performance of poly-Si TFTs fabricated by SELAX
Mitsuharu Tai,Mutsuko Hatano,Shinya Yamaguchi,Takeshi Noda,Seong-Kee Park,Takeo Shiba,Makoto Ohkura +6 more
TL;DR: Selectively enlarging laser crystallization (SELAX) has been proposed as a new crystallization process for use in the fabrication of thin-film transistors (TFTs) as discussed by the authors.