M
Manabendra Kuiri
Researcher at Indian Institute of Science
Publications - 15
Citations - 249
Manabendra Kuiri is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Electron & Graphene. The author has an hindex of 8, co-authored 13 publications receiving 198 citations.
Papers
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Enhancing photoresponsivity using MoTe2-graphene vertical heterostructures
TL;DR: In this paper, a few layer MoTe2-graphene vertical heterostructures have a much larger photo responsivity of ∼20 µmµW−1.
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Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices
TL;DR: The results reveal that the low-frequency noise in graphene can be tuned by more than two-orders of magnitude by changing carrier concentration as well as by modifying the band structure in bilayer graphene.
Journal ArticleDOI
Photo-tunable transfer characteristics in MoTe 2 –MoS 2 vertical heterostructure
A K Paul,Manabendra Kuiri,Dipankar Saha,Biswanath Chakraborty,Santanu Mahapatra,A. K. Sood,Anindya Das +6 more
TL;DR: In this paper, the authors present the fabrication, electrical, and opto-electrical characterization of vertically stacked few-layers MoTe2p-single-layer MoS2(n) heterojunction.
Journal ArticleDOI
Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor
Biswanath Chakraborty,Satyendra Nath Gupta,Anjali Singh,Manabendra Kuiri,Chandan Kumar,D. V. S. Muthu,Anindya Das,Umesh V. Waghmare,A. K. Sood +8 more
TL;DR: Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, this article showed that phonons with A(g) symmetry depend much more strongly on concentration of electrons than that of holes.
Posted Content
Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor
Biswanath Chakraborty,Satyendra Nath Gupta,Anjali Singh,Manabendra Kuiri,Chandan Kumar,D. V. S. Muthu,Anindya Das,Umesh V. Waghmare,A. K. Sood +8 more
TL;DR: Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, this paper showed that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes.