Chemistries that Facilitate Nanotechnology Kim E. Sapsford,† W. Russ Algar, Lorenzo Berti, Kelly Boeneman Gemmill,‡ Brendan J. Casey,† Eunkeu Oh, Michael H. Stewart, and Igor L. Medintz*,‡ †Division of Biology, Department of Chemistry and Materials Science, Office of Science and Engineering Laboratories, U.S. Food and Drug Administration, Silver Spring, Maryland 20993, United States ‡Center for Bio/Molecular Science and Engineering Code 6900 and Division of Optical Sciences Code 5611, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States College of Science, George Mason University, 4400 University Drive, Fairfax, Virginia 22030, United States Department of Biochemistry and Molecular Medicine, University of California, Davis, School of Medicine, Sacramento, California 95817, United States Sotera Defense Solutions, Crofton, Maryland 21114, United States

Functionalizing nanoparticles with biological molecules: developing chemistries that facilitate nanotechnology.

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs

A Graphene Field-Effect Device

Magnetic oxides show a variety of extrinsic magnetotransport phenomena: grain-boundary, tunnelling and domain-wall magnetoresistance. In view of these phenomena the role of some magnetic oxides is outstanding: these are believed to be half-metallic having only one spin-subband at the Fermi level. These fully spin-polarized oxides have great potential for applications in spin-electronic devices and have, accordingly, attracted intense research activity in recent years. This review is focused on extrinsic magnetotransport effects in ferromagnetic oxides. It consists of two parts; the second part is devoted to an overview of experimental data and theoretical models for extrinsic magnetotransport phenomena. Here a critical discussion of domain-wall scattering is given. Results on surface and interfacial magnetism in oxides are presented. Spin-polarized tunnelling in ferromagnetic junctions is reviewed and grain-boundary magnetoresistance is interpreted within a model of spin-polarized tunnelling through natural oxide barriers. The situation in ferromagnetic oxides is compared with data and models for conventional ferromagnets. The first part of the review summarizes basic material properties, especially data on the spin polarization and evidence for half-metallicity. Furthermore, intrinsic conduction mechanisms are discussed. An outlook on the further development of oxide spin-electronics concludes this review.

Extrinsic magnetotransport phenomena in ferromagnetic oxides

Extensive calculations based on density functional theory have been carried out to understand the origin of magnetism in undoped ZnO thin films as found in recent experiments. The observed magnetism is confirmed to be due to Zn, instead of O, vacancy. The main source of the magnetic moment, however, arises from the unpaired 2p electrons at O sites surrounding the Zn vacancy with each nearest-neighbor O atom carrying a magnetic moment ranging from 0.490 to 0.740 B. Moreover, the study of vacancy-vacancy interactions indicates that in the ground state, the magnetic moments induced by Zn vacancies prefer to ferromagnetically couple with the antiferromagnetic state lying 44 meV higher in energy. Since this is larger than the thermal energy at room temperature, the ferromagnetic state can be stable against thermal fluctuations. Calculations and discussions are also extended to ZnO nanowires that have larger surface to volume ratio. Here, the Zn vacancies are found to lead to the ferromagnetic state too. The present theoretical study not only demonstrates that ZnO samples can be magnetic even without transition-metal doping but also suggests that introducing Zn vacancy is a natural and an effective way to fabricate magnetic ZnO nanostructures. In addition, vacancy mediated magnetic ZnO nanostructures may have certain advantages over transition-metal doped systems in biomedical applications.

https://absimage.aps.org/image/MAR08/MWS_MAR08-2007-004197.pdf

Zinc Vacancy induced magnetism in ZnO thin films and nanowires

ZnO films were prepared by pulsed laser deposition on a-plane sapphire substrates under N2 atmosphere. Ferromagnetic loops were obtained with the superconducting quantum interference device at room temperature, which indicate a Curie temperature much above room temperature. No clear ferromagnetism was observed in intentionally Cu-doped ZnO films. This excludes that Cu doping into ZnO plays a key role in tuning the ferromagnetism in ZnO. 8.8% negative magnetoresistance probed at 5K at 60kOe on ferromagnetic ZnO proves the lack of s-d exchange interaction. Anomalous Hall effect (AHE) was observed in ferromagnetic ZnO as well as in nonferromagnetic Cu-doped ZnO films, indicating that AHE does not uniquely prove ferromagnetism. The observed ferromagnetism in ZnO is attributed to intrinsic defects.

Room temperature ferromagnetism in ZnO films due to defects

We report here the enhancement of ferromagnetism in pure ZnO upon thermal annealing with the ferromagnetic transition temperature Tc above room temperature. We observe a finite coercive field up to 300K and a finite thermoremanent magnetization up to 340K for the annealed sample. We propose that magnetic moments can be formed at anionic vacancy clusters. Ferromagnetism can occur due to either superexchange between vacancy clusters via isolated F+ centers or through a limited electron delocalization between vacancy clusters. Isolated vacancy clusters or isolated F+ centers give rise to a strong paramagneticlike behavior below 10K.

Enhancement of ferromagnetism upon thermal annealing in pure ZnO

We report here enhancement of ferromagnetism in pure ZnO upon thermal annealing with the ferromagnetic transition temperature Tc above room temperature. We observe a finite coercive field upto 300K and a finite thermoremanent magnetization upto 340K for the annealed sample. We propose that magnetic moments can form at anionic vacancy clusters. Ferromagnetism can occur due to either superexchange between vacancy clusters via isolated F+ centers, or through a limited electron delocalization between vacancy clusters. Isolated vacancy clusters or isolated F+ centers give rise to a strong paramagnetic like behaviour below 10K.

We present an extensive study on electrical spectroscopy of graphene ribbons and edges of highly oriented pyrolytic graphite (HOPG) using atomic force microscope (AFM). We have addressed in the present study two main issues (1) How does the electrical property of the graphite (graphene) sheet change when the graphite layer is displaced by shear forces? and (2) How does the electrical property of the graphite sheet change across a step edge? While addressing these two issues we observed (1) variation of conductance among the graphite ribbons on the surface of HOPG. The top layer always exhibits more conductance than the lower layers, (2) two different monolayer ribbons on the same sheet of graphite shows different conductance, (3) certain ribbon/sheet edges show sharp rise in current, (4) certain ribbons/sheets on the same edge shows both presence and absense of the sharp rise in the current, and (5) some lower layers at the interface near a step edge shows a strange dip in the current/conductance (depletion of charge). We discuss possible reasons for such rich conducting landscape on the surface of graphite.

Conductivity landscape of highly oriented pyrolytic graphite surfaces containing ribbons and edges

We have observed that the conductivity of graphene sheets is higher whenever they are loosely bound to the underlying bulk graphite. We also observe that certain edges of the graphene layers show sharp rise in current when biased, indicating enhanced electronic density of states spatially localized near those edges. In certain edges, we do not observe this phenomenon. These two observations, i.e., enhancement of conductivity of loosely bound layers and sharp rise in current at the edges are discussed with possible reasons and invoking recent theoretical predictions.

/pdf/enhanced-conductivity-in-graphene-layers-and-at-their-edges-59aig6nfc1.pdf

Enhanced conductivity in graphene layers and at their edges

In this paper, we have reported about the enhancement of magnetization and blocking temperature of the Fe3O4-reduced graphene oxide (RGO) nanocomposite, which is formed by embedding Fe3O4 nanoparti...

Manas Sardar

Papers

Enhancement of ferromagnetism upon thermal annealing in pure ZnO

Enhancement of ferromagnetism upon thermal annealing in pure ZnO

Conductivity landscape of highly oriented pyrolytic graphite surfaces containing ribbons and edges

Enhanced conductivity in graphene layers and at their edges

Magnetization Enhancement of Fe3O4 by Attaching onto Graphene Oxide: An Interfacial Effect