Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

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A roadmap for graphene

The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light-emitting devices to touch screens, photodetectors and ultrafast lasers. Here we review the state-of-the-art in this emerging field.

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Graphene photonics and optoelectronics

Graphene, the single-atom-thick form of carbon, holds promise for many applications, notably in electronics where it can complement or be integrated with silicon-based devices. Intense efforts have been devoted to develop a key enabling device, a broadband, fast optical modulator with a small device footprint. Now Liu et al. demonstrate an exciting new possibility for graphene in the area of on-chip optical communication: a graphene-based optical modulator integrated with a silicon chip. This new device relies on the electrical tuning of the Fermi level of the graphene sheet, and achieves modulation of guided light at frequencies over 1 gigahertz, together with a broad operating spectrum. At just 25 square micrometres in area, it is one of the smallest of its type. Integrated optical modulators with high modulation speed, small footprint and large optical bandwidth are poised to be the enabling devices for on-chip optical interconnects1,2. Semiconductor modulators have therefore been heavily researched over the past few years. However, the device footprint of silicon-based modulators is of the order of millimetres, owing to its weak electro-optical properties3. Germanium and compound semiconductors, on the other hand, face the major challenge of integration with existing silicon electronics and photonics platforms4,5,6. Integrating silicon modulators with high-quality-factor optical resonators increases the modulation strength, but these devices suffer from intrinsic narrow bandwidth and require sophisticated optical design; they also have stringent fabrication requirements and limited temperature tolerances7. Finding a complementary metal-oxide-semiconductor (CMOS)-compatible material with adequate modulation speed and strength has therefore become a task of not only scientific interest, but also industrial importance. Here we experimentally demonstrate a broadband, high-speed, waveguide-integrated electroabsorption modulator based on monolayer graphene. By electrically tuning the Fermi level of the graphene sheet, we demonstrate modulation of the guided light at frequencies over 1 GHz, together with a broad operation spectrum that ranges from 1.35 to 1.6 µm under ambient conditions. The high modulation efficiency of graphene results in an active device area of merely 25 µm2, which is among the smallest to date. This graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.

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A graphene-based broadband optical modulator

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Micrometre-scale silicon electro-optic modulator

In the absence of using any chromatic dispersion compensation technique, it may be difficult to detect the transmitted data over long distances at the receiving end. Embodiments utilize the optical phase conjugation (OPC) property in silicon waveguides to compensate chromatic dispersion effect in optical fibers.

Silicon waveguide dispersion compensator using optical phase conjugation

In an effort to determine low-cost alternatives for components currently used in DWDM, optical ring resonators are currently being investigated. The well-known microfabrication techniques of silicon, coupled with the low propagation loss of single crystal silicon, make SOI an attractive material. Laterally coupled racetrack resonators utilising rib waveguides have been fabricated and preliminary results are discussed. An extinction ratio of 15.9 dB and a finesse of 11 have been measured.

Fabrication of optical ring resonators in silicon on insulator

We present a monolithic integrated Raman silicon laser and amplifier based on silicon-on-insulator rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we efficiently reduced the nonlinear loss due to two-photon absorption induced free carrier absorption and achieved continuous-wave net gain and stable, single-mode lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a side mode suppression exceeding 70dB and a laser linewidth of <100 kHz. This ring resonator architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device. Using the ring resonator architecture, we can build a compact, chip scale Raman amplifier that takes advantage of the resonance effect to increase the effective pump power and reduce the device size. Our simulations suggest that a 3dB net gain can be achieved with 4dB less pump power in a 3cm ring compared to a straight waveguide of the same length.

Recent development on silicon-based Raman lasers and amplifiers

Recent breakthroughs in silicon photonics technology may soon lead to mass-producible chip-scale tactical-grade (or better) gyroscopes by using a CMOS-compatible fabrication process to print highly integrated high-sensitivity optical gyroscopes. This paper reports our progress on designing and building an optical gyro out of an SiN racetrack resonator of 37-mm perimeter with 1270 finesse (108 intrinsic quality factor) using off-the-shelf fiber components (circulators, splitters, and modulators) and a semiconductor laser to achieve an angular random walk (ARW) of 80 deg/h/Hz, or 1.3 deg/h. To our knowledge, it is a record by a factor of 2 for the ARW per footprint area of a Sagnac-effect-based gyroscope on a chip. A balanced-detection scheme is employed to cancel 18 dB of gyroscope noise caused by laser phase noise converted into amplitude noise by residual backscatterers in the resonator. The backscattering coefficient was found to be very sensitive to wavelength, and therefore to the resonance used to probe the resonator. The lowest backscattering coefficient was measured to be more than 1,000 times lower than the mean. The use of this resonance, as well as an asymmetric phase-modulation scheme, greatly reduced the gyroscope’s backscattering noise. Achieving this gyro’s theoretical minimum ARW of 16 deg/h/Hz will likely require a lower backscattering coefficient or better means of cancelling backscattering noise. Further improvements to tactical-grade performance (and better) will likely require a larger resonator area, further reduction of backscattering, and/or a laser with reduced frequency noise.

Chip-scale gyroscope using silicon-nitride waveguide resonator with a Q factor of 100 million

A modular reconfigurable multi-server system with hybrid optical and electrical switching fabrics for high-speed networking within a wavelength-division-multiplexed based photonic burst-switched (PBS) network with variable time slot provisioning. An optical high-speed I/O module within the multi-server system includes an optical switch with the control interface unit. A server module of the multi-server system statistically multiplexes IP packets and/or Ethernet frames to be transmitted over the PBS network, generate control and data bursts and schedule their transmission. Then, the server E-O converts the bursts, and then transmits the optical bursts to the optical I/O module. The optical I/O module then optically transmits the bursts to the next hop in the optical path after processing the optical control burst to configure the optical switch, which then optically switches the optical data burst without performing an O-E-O conversion.

Mario J. Paniccia

Papers

Silicon waveguide dispersion compensator using optical phase conjugation

Fabrication of optical ring resonators in silicon on insulator

Recent development on silicon-based Raman lasers and amplifiers

Chip-scale gyroscope using silicon-nitride waveguide resonator with a Q factor of 100 million

Modular reconfigurable multi-server system and method for high-speed photonic burst-switched networks