M
Mario J. Paniccia
Researcher at Intel
Publications - 235
Citations - 14428
Mario J. Paniccia is an academic researcher from Intel. The author has contributed to research in topics: Silicon photonics & Hybrid silicon laser. The author has an hindex of 48, co-authored 224 publications receiving 13587 citations. Previous affiliations of Mario J. Paniccia include Corning Inc..
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Patent
Reduced loss ultra-fast semiconductor modulator and switch
TL;DR: In this article, a fast optical modulator or switch with reduced optical loss is disclosed, which includes an optical splitter disposed in a semiconductor material and is optically coupled to the first and second optical waveguides, respectively.
Proceedings ArticleDOI
Origin of the gain-bandwidth-product enhancement in separate-absorption-charge-multiplication Ge/Si avalanche photodiodes
Wissem Sfar Zaoui,Hui-Wen Chen,John E. Bowers,Yimin Kang,Mike Morse,Mario J. Paniccia,Alexandre Pauchard,Joe C. Campbell +7 more
TL;DR: In this paper, a separate absorbption-charge-multiplication Ge/Si avalanche photodiode with very high gain-bandwidth-product over 800GHz is reported, and the origin of this dramatically high value is explained using well consentient measurement and simulation results.
Proceedings ArticleDOI
Heterogeneous Integration of Silicon and AlGaInAs for a Silicon Evanescent Laser
TL;DR: In this paper, the authors proposed a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon waveguide and offset AlGaInAs quantum wells.
Proceedings ArticleDOI
Tunable Bragg grating filters in SOI waveguides
TL;DR: In this paper, a thermally tunable Bragg grating filter based on silicon-on-insulator (SOI) technology is presented, which achieves periodic refractive index modulation with alternating regions of single-crystalline silicon and poly-crystaline silicon (polySi).
Proceedings ArticleDOI
Enhanced polarization-independent optical ring resonators on silicon-on-insulator
TL;DR: In this paper, the authors proposed an optical race track ring resonator with an FSR that is approximately 400% larger than that of those previously fabricated, whilst retaining polarisation independence.