M
Mark L. Doczy
Researcher at Intel
Publications - 184
Citations - 5708
Mark L. Doczy is an academic researcher from Intel. The author has contributed to research in topics: Layer (electronics) & Gate oxide. The author has an hindex of 43, co-authored 184 publications receiving 5672 citations. Previous affiliations of Mark L. Doczy include Metz.
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Patent
Nonplanar transistors with metal gate electrodes
TL;DR: In this paper, a gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the SINR, and a pair of source and drain regions are then formed on opposite sides of the gate electrode.
Patent
Method for making a semiconductor device having a high-k gate dielectric
Mark L. Doczy,Gilbert Dewey,Suman Datta,Sangwoo Pae,Justin K. Brask,Jack T. Kavalieros,Matthew V. Metz,Adrian B. Sherrill,Markus Kuhn,Robert S. Chau +9 more
TL;DR: In this paper, a method for making a semiconductor device is described, which comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer.
Patent
Block Contact Architectures for Nanoscale Channel Transistors
Marko Radosavljevic,Amlan Majumdar,Brian S. Doyle,Jack T. Kavalieros,Mark L. Doczy,Justin K. Brask,Uday Shah,Suman Datta,Robert S. Chau +8 more
TL;DR: In this article, a contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies is presented.
Patent
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
Justin K. Brask,Jack T. Kavalieros,Mark L. Doczy,Uday Shah,Chris E. Barns,Matthew V. Metz,Suman Datta,Annalisa Cappellani,Robert S. Chau +8 more
TL;DR: In this article, a method for making a semiconductor device is described, which comprises forming a first dielectric layer on a substrate, a trench within the first layer, and a second layer on the substrate.
High- /Metal-Gate Stack and Its MOSFET Characteristics
TL;DR: In this article, the authors show that surface phonon scattering in the high- dielectric is the primary cause of channel electron mobility degradation, and demonstrate that midgap TiN metal-gate electrode is effective in screening phonon scatter from coupling to the channel under inversion conditions.