Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the type MX2, where M is a transition metal atom (such as Mo or W) and X is a chalcogen atom (such as S, Se or Te), provide a promising alternative. Because of its robustness, MoS2 is the most studied material in this family. TMDCs exhibit a unique combination of atomic-scale thickness, direct bandgap, strong spin–orbit coupling and favourable electronic and mechanical properties, which make them interesting for fundamental studies and for applications in high-end electronics, spintronics, optoelectronics, energy harvesting, flexible electronics, DNA sequencing and personalized medicine. In this Review, the methods used to synthesize TMDCs are examined and their properties are discussed, with particular attention to their charge density wave, superconductive and topological phases. The use of TMCDs in nanoelectronic devices is also explored, along with strategies to improve charge carrier mobility, high frequency operation and the use of strain engineering to tailor their properties. Two-dimensional transition metal dichalcogenides (TMDCs) exhibit attractive electronic and mechanical properties. In this Review, the charge density wave, superconductive and topological phases of TMCDs are discussed, along with their synthesis and applications in devices with enhanced mobility and with the use of strain engineering to improve their properties.

2D transition metal dichalcogenides

We report the experimental discovery of intrinsic ferromagnetism in Cr 2 Ge 2 Te 6 atomic layers by scanning magneto-optic Kerr microscopy. In this 2D van der Waals ferromagnet, unprecedented control of transition temperature is realized via small magnetic fields.

Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals

In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Ferromagnetic materials

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

/pdf/science-and-technology-roadmap-for-graphene-related-two-4q9m7czlkc.pdf

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Physical Review B

Spin transfer in an asymmetric nanopillar spin valve is studied numerically in the diffusive transport regime. The system considered includes a pinned synthetic antiferromagnetic structure, which is separated from the sensing layer by a thin nonmagnetic film. Landau-Lifshitz-Gilbert equation, with the spin-transfer torque taken into account, is used to study current-induced magnetic dynamics in the macrospin model. It is shown that steady dynamical states can occur in the absence of magnetic field. The advantage of systems including a synthetic antiferromagnetic structure, compared to simple spin valves, is also discussed.

Current-induced dynamics in asymmetric spin valves

We investigate the anisotropy of the optical properties of thin Fe films on GaAs(001) from first-principles calculations. Both intrinsic and magnetization-induced anisotropy are covered by studying the system in the presence of spin-orbit coupling and external magnetic fields. We use the linearized augmented plane wave method, as implemented in the wien2k density functional theory code, to show that the ${C}_{2v}$ symmetric anisotropy of the spin-orbit coupling fields at the Fe/GaAs(001) interface manifests itself in the corresponding anisotropy of the optical conductivity and the polar magneto-optical Kerr effect. While their magnetization-induced anisotropy is negligible, the intrinsic anisotropy of the optical properties is significant and reflects the underlying ${C}_{2v}$ symmetry of the Fe/GaAs(001) interface. This suggests that the effects of anisotropic spin-orbit coupling fields in experimentally relevant Fe/GaAs(001) slabs can be studied by purely optical means.

/pdf/anisotropic-optical-properties-of-fe-gaas-001-nanolayers-44j0sf998c.pdf

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

Spin transfer between conduction electrons and local magnetic moments can switch spin valves between different magnetic configurations. In some conditions, however, the spin torque can induce magnetic switching to stationary precessional modes. In this paper we consider current-induced magnetic switching in nanopillar spin valves including two thin magnetic films separated by a nonmagnetic layer, and in molecular-based spin valves. In the former case the spin torque is calculated from the macroscopic spin diffusion equations, while in the latter one we use quantum description based on the Fermi golden rule.

Current-induced switching in spin-valve structures

We present a joint experiment-theory study on the role of fluorine adatoms in spin and momentum scattering of charge carriers in dilute fluorinated graphene and bilayer graphene. The experimental spin-flip and momentum scattering rates and their dependence on the density of fluorine and carrier doping are obtained through weak localization and conductivity measurements, respectively, and suggest the role of fluorine as resonant magnetic impurities. For the estimated fluorine concentration of a few hundred ppm, the observed spin lifetimes are in the range of 1--10 ps. Theoretically, we established tight-binding electronic structures of fluorinated graphene and bilayer graphene by fitting to density-functional supercell calculations and performed a comprehensive analysis of the spin-flip and momentum scattering rates within the same devices, aiming to develop a consistent description of both scattering channels. We find that resonant scattering in graphene is very sensitive to the precise position of the resonance level, as well as to the magnitude of the exchange coupling between itinerant carriers and localized spins. The experimental data point to the presence of weak spin-flip scatterers that, at the same time, relax the electron momentum strongly, nearly preserving the electron-hole symmetry. Such scatterers would exhibit resonance energies much closer to the neutrality point than what density-functional theory predicts in the dilute limit. The inclusion of a magnetic moment on fluorine adatoms allowed us to qualitatively capture the carrier-density dependence of the experimental rates but predicts a greater (weaker) spin (momentum) relaxation rate than the measurements. We discuss possible scenarios that may be responsible for the discrepancies. Our systematic study exposes the complexities involved in accurately capturing the behavior of adatoms on graphene.

Spin relaxation in fluorinated single and bilayer graphene

The spin market model [S. Bornholdt, Int. J. Mod. Phys. C 12 (2001) 667] is generalized by employing co-evolutionary principles, where strategies of the interacting and competitive traders are represented by local and global couplings between the nodes of dynamic directed stochastic network. The co-evolutionary principles are applied in the frame of Bak–Sneppen self-organized dynamics [P. Bak, K. Sneppen, Phys. Rev. Lett. 71 (1993) 4083] that includes the processes of selection and extinction actuated by the local (node) fitness. The local fitness is related to orientation of spin agent with respect to the instant magnetization. The stationary regime is formed due to the interplay of self-organization and adaptivity effects. The fat tailed distributions of log-price returns are identified numerically. The non-trivial model consequence is the evidence of the long time market memory indicated by the power-law range of the autocorrelation function of volatility with exponent smaller than one. The simulations yield network topology with broad-scale node degree distribution characterized by the range of exponents 1.3 γ in 3 coinciding with social networks.

Martin Gmitra

Papers

Current-induced dynamics in asymmetric spin valves

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

Current-induced switching in spin-valve structures

Spin relaxation in fluorinated single and bilayer graphene

The co-evolutionary dynamics of directed network of spin market agents