M
Martin Gmitra
Researcher at University of Regensburg
Publications - 140
Citations - 7608
Martin Gmitra is an academic researcher from University of Regensburg. The author has contributed to research in topics: Graphene & Spin–orbit interaction. The author has an hindex of 32, co-authored 127 publications receiving 6144 citations. Previous affiliations of Martin Gmitra include Adam Mickiewicz University in Poznań & University of Pavol Jozef Šafárik.
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Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
TL;DR: An effective model of proximity modified graphene with broken time-reversal symmetry with staggered intrinsic spin-orbit and uniform exchange coupling gives topologically protected pseudohelical states, whose spin is opposite in opposite zigzag edges.
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Robust spin-Orbit torque and spin-galvanic effect at the Fe/GaAs (001) Interface at room temperature
L. Chen,Martin Decker,M. Kronseder,R. Islinger,Martin Gmitra,Dieter Schuh,Dominique Bougeard,Jaroslav Fabian,Dieter Weiss,Christian H. Back +9 more
TL;DR: It is found that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems, and suggests that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.
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Protected Pseudohelical Edge States in Z 2 -Trivial Proximitized Graphene
TL;DR: In this paper, the authors investigated topological properties of spin-orbit coupling on realistic substrates and showed that the spin character and robustness of the pseudohelical modes is best exhibited on a finite flake, which shows that the edge states have zero g factor, carry a pure spin current in the cross section of the flake and exhibit spin-flip reflectionless tunneling at the armchair edges.
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First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors
Martin Gmitra,Jaroslav Fabian +1 more
TL;DR: In this paper, the spin-orbit fields for the relevant valence and conduction bands at the zone center were extracted by fitting the spin splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms.
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Heterostructures of graphene and hBN: Electronic, spin-orbit, and spin relaxation properties from first principles
TL;DR: In this article, the authors performed extensive first-principles calculations for heterostructures composed of monolayer graphene and hexagonal boron nitride (hBN) and employed a symmetry-derived minimal tight-binding model to extract orbital and spin-orbit coupling (SOC) parameters for graphene on hBN, as well as for hBN encapsulated graphene.