Martin McCallum

TL;DR: In this article, the results obtained from conventional mask metrology compare with results from advanced analysis including mask topography information obtained using an automated atomic force microscope (AFM), showing how the metrology structures on the mask compare to the actual structures in the patterning area.

TL;DR: In this paper, the authors discuss routes to extend optical lithography to the 70 nm technology node using proper selection of masks, mask design including choice of optical proximity correction (OPC), exposure tool, illuminator design, and resist design to do imaging process integration.

TL;DR: Simulations indicate high transmission attenuated phase shift mask to improve resolution, reduce line end shortening, corner rounding and provide process window enhancements for some pitches and that as the transmission is increased for line feature, the Normalized image log slope increases for all pitches.

TL;DR: In this article, the authors illustrate process window improving by imaging enhancement with binary and attenuated mask, with conventional and annular off-axis illumination, with and without OPC.

TL;DR: In this paper, a new empirical structural parameter is proposed for predicting reactive ion etch (RIE) rates within a given family of polymers, with two caveats: (1) the methacrylate and cyclic olefin families examined to date fall on essentially parallel, offset curves when examined with the new model, and (2) the offset between polymer family curves is RIE tool-and process-dependent.