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Robert John Socha
Researcher at National Semiconductor
Publications - 10
Citations - 114
Robert John Socha is an academic researcher from National Semiconductor. The author has contributed to research in topics: Optical proximity correction & Reticle. The author has an hindex of 6, co-authored 10 publications receiving 114 citations.
Papers
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Proceedings ArticleDOI
Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography
John S. Petersen,Robert John Socha,Alex R. Naderi,Catherine A. Baker,Syed A. Rizvi,Douglas Van Den Broeke,Nishrin Kachwala,J. Fung Chen,Thomas Laidig,Kurt E. Wampler,Roger F. Caldwell,Susumu Takeuchi,Yoshiro Yamada,Takashi Senoh,Martin McCallum +14 more
TL;DR: In this article, the authors showed that a combination of 240 nm dual-trench and 5 nm to 10 nm undercut produces images with equal intensity between shifted and unshifted regions without loss of image contrasts.
Proceedings ArticleDOI
Resolution enhancement with high-transmission attenuating phase-shift masks
Robert John Socha,Will Conley,Xuelong Shi,Mircea Dusa,John S. Petersen,J. Fung Chen,Kurt E. Wampler,Thomas Laidig,Roger F. Caldwell +8 more
TL;DR: In this paper, an 18% transmittance attenuating phase shift mask was used to improve aerial image log slope through focus for the lines and contacts, and the results showed that a ternary contact hole mask is capable of manufacture.
Proceedings ArticleDOI
Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node
John S. Petersen,Martin McCallum,Nishrin Kachwala,Robert John Socha,J. Fung Chen,Thomas Laidig,Bruce W. Smith,Ronald L. Gordon,Chris A. Mack +8 more
TL;DR: In this paper, the authors discuss routes to extend optical lithography to the 70 nm technology node using proper selection of masks, mask design including choice of optical proximity correction (OPC), exposure tool, illuminator design, and resist design to do imaging process integration.
Proceedings ArticleDOI
Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask through simulation I
Robert John Socha,John S. Petersen,J. Fung Chen,Thomas Laidig,Kurt E. Wampler,Roger F. Caldwell +5 more
TL;DR: In this paper, the authors used a primitive positive photoresist model in order to predict trends in resolution and to predict when side lobes begin printing, and showed that the serifs which create an effective contact bias also suppress side lobe printing.
Proceedings ArticleDOI
Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering-bar optical proximity correction
TL;DR: In this paper, the role of the nonlinearity of the resist in reducing the error observed at the wafer in comparison to the errors observed in the aerial image (MEFaerial) was investigated.