M
Martin Nikl
Researcher at Academy of Sciences of the Czech Republic
Publications - 890
Citations - 22558
Martin Nikl is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Luminescence & Scintillation. The author has an hindex of 61, co-authored 845 publications receiving 19590 citations. Previous affiliations of Martin Nikl include University of Milan & Claude Bernard University Lyon 1.
Papers
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Scintillation detectors for x-rays
TL;DR: In this article, a review of recent research in the field of phosphor and scintillator materials and related detectors is presented, where the fundamental issues regarding the interaction of x-ray radiation with a solid state are explained.
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Recent R&D Trends in Inorganic Single-Crystal Scintillator Materials for Radiation Detection
Martin Nikl,Akira Yoshikawa +1 more
TL;DR: The major achievements and research and development trends from the last decade in the field of single crystal scintillator materials are described in this paper, where two material families are included, namely, those of halide and oxide compounds.
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Composition Engineering in Cerium-Doped (Lu,Gd)3(Ga,Al)5O12 Single-Crystal Scintillators
Kei Kamada,Takanori Endo,Kousuke Tsutumi,Takayuki Yanagida,Yutaka Fujimoto,Akihiro Fukabori,Akira Yoshikawa,J. Pejchal,Martin Nikl +8 more
TL;DR: In this paper, the authors used a combinatorial approach where targeted single-crystal compositions are obtained by a flexible, time saving, and cost-effective crystal growth technique.
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Wide Band Gap Scintillation Materials: Progress in the Technology and Material Understanding
TL;DR: In this paper, the scintillation characteristics of four selected material systems, namely CsI:Tl(Na), CeF 3, PbWO 4 and Ce-doped aluminium perovskites XAIO 3 :Ce (X=Y, Lu, Y-Lu) are reviewed.
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Band-gap engineering for removing shallow traps in rare-earth Lu 3 Al 5 O 12 garnet scintillators using Ga 3 + doping
Mauro Fasoli,Anna Vedda,Martin Nikl,Chao Jiang,Blas P. Uberuaga,David A. Andersson,Kenneth J. McClellan,Christopher R. Stanek +7 more
TL;DR: In this paper, a combination of first-principles calculations and optical characterization experiments was employed to explain the mechanism by which Ga${}^{3+}$ doping prevents the trapping of free carriers due to shallow traps in RE${}_{3}$Al${} 5}$O${} 12}$ garnet scintillators (where RE represents a $3+$ rare-earth cation).