Masahiro Ushiyama

TL;DR: In this article, the interlayer insulating film of a nonvolatile memory is selectively removed on the peripheral circuit MOS area, and the polycrystalline silicon film as a lower layer is used as a buffer layer against contamination or damage due to the etching.

TL;DR: In this paper, a nonvolatile semiconductor memory device is described, which includes a gate electrode (e.g., floating gate electrode) having a first layer of an amorphous silicon film, or a polycrystalline silicon thin film or a film of a combination of ammorphous and polycrystaline silicon, on the gate insulating film.

TL;DR: In this paper, a gate dielectric film 6 is made as follows: after forming a silicon nitride film 3 with a specified thickness, it is annealed in an oxidizing atmosphere to form silicon oxide 4 on the silicon oxide film 3, then this silicon oxide is completely removed by exposure to a dissolving liquid.

TL;DR: An internal erase and erase-verify control system implemented in all electrically erasable, reprogrammable, 80-ns, 1-Mb flash memory suitable for in-system reprogram applications is discussed, and timing in the electrical erase mode is shown.

TL;DR: In this article, the gate electrode polycrystalline silicon (gate poly-Si)/gate insulator SiO/sub 2/ interface structure has been studied for obtaining reliable nonvolatile memory devices.