Y
Yuzuru Ohji
Researcher at Hitachi
Publications - 122
Citations - 1465
Yuzuru Ohji is an academic researcher from Hitachi. The author has contributed to research in topics: High-κ dielectric & Metal gate. The author has an hindex of 21, co-authored 122 publications receiving 1438 citations.
Papers
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Journal ArticleDOI
Hot-electron hardened Si-gate MOSFET utilizing F implantation
TL;DR: In this paper, a technique for incorporating fluorine (F) into the gate-oxide film, and the subsequent improvement of channel-hot-electron hardness of the resulting MOSFET is reported.
Patent
Manufacturing method of non-volatile semiconductor memory device
TL;DR: In this article, the interlayer insulating film of a nonvolatile memory is selectively removed on the peripheral circuit MOS area, and the polycrystalline silicon film as a lower layer is used as a buffer layer against contamination or damage due to the etching.
Patent
Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
TL;DR: In this article, a high-dielectric-constant insulator is formed over that structure by Chemical Vapor Deposition and a non-stoichiometric composition layer formed on the trench bottom has a low dielectric constant and a high insulation to maintain electric insulation between adjoining bottom capacitor electrodes.
Journal ArticleDOI
Dielectric characteristics of fluorinated ultradry SiO2
TL;DR: In this paper, the possible role of fluorine on the improvement of the dielectric characteristics of metal-oxide-semiconductor capacitors with fluorinated ultradry oxides has been discussed.
Journal ArticleDOI
Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs
Masaru Kadoshima,Takeo Matsuki,Seiichi Miyazaki,Kenji Shiraishi,T. Chikyo,Kizuku Yamada,T. Aoyama,Yasuo Nara,Yuzuru Ohji +8 more
TL;DR: In this article, the controllability of the effective work function (phim,eff) of TiN as a work function determining metal (WFM) for various gate-electrode structures in HfSiON MOSFETs was investigated.