M
Masahito Kurouchi
Researcher at Ritsumeikan University
Publications - 39
Citations - 460
Masahito Kurouchi is an academic researcher from Ritsumeikan University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 12, co-authored 35 publications receiving 414 citations. Previous affiliations of Masahito Kurouchi include Industrial Technology Research Institute.
Papers
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Journal ArticleDOI
Inactivation of Bacterial Viruses in Water Using Deep Ultraviolet Semiconductor Light-Emitting Diode
Yoshinobu Aoyagi,Misaichi Takeuchi,Kaoru Yoshida,Masahito Kurouchi,Nobuhito Yasui,Naoyuki Kamiko,Tutomu Araki,Yasushi Nanishi +7 more
TL;DR: In this paper, the authors used deep ultraviolet light-emitting diodes (DUV-LEDs) operated at 280 and 255 nm for disentangling MS2, Qβ, and φX174 in water.
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Dielectric function and Van Hove singularities for In-rich In x Ga 1 − x N alloys: Comparison of N- and metal-face materials
P. Schley,R. Goldhahn,A. T. Winzer,Gerhard Gobsch,V. Cimalla,Oliver Ambacher,Hong-Yan Lu,William J. Schaff,Masahito Kurouchi,Yasushi Nanishi,M. Rakel,Christoph Cobet,Norbert Esser +12 more
TL;DR: In this paper, the complex dielectric function (DF) for hexagonal alloys with N-face polarity from near-infrared into the vacuum ultraviolet spectral region was determined by a fit of the third derivative of the DF.
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Growth and properties of In‐rich InGaN films grown on (0001) sapphire by RF‐MBE
TL;DR: In this paper, the optical properties of strain-free In-rich In x Ga 1-x N (0.61 ≤ x ≤ 1.0) films that were grown directly on (0001) sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy were investigated.
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Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors
Akihiro Hinoki,Junjiroh Kikawa,Tomoyuki Yamada,Tadayoshi Tsuchiya,Shinichi Kamiya,Masahito Kurouchi,Kenichi Kosaka,Tsutomu Araki,Akira Suzuki,Yasushi Nanishi +9 more
TL;DR: In this paper, the off-state breakdown characteristics of GaN layers with different thicknesses from 0.2 to 2 µm were discussed using the space-charge-limited current conduction mechanism.
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Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties
TL;DR: Growth of InN by radio frequency plasma-excited molecular beam epitaxy on (0001) sapphire was systematically studied in this paper, where the following growth conditions were found to be essential: (1) nitridation, (2) two-step growth, (3) precise control of V/III ratio, and (4) selection of optimum growth temperature.