M
Masashi Kurosawa
Researcher at Nagoya University
Publications - 124
Citations - 1591
Masashi Kurosawa is an academic researcher from Nagoya University. The author has contributed to research in topics: Crystallization & Thin film. The author has an hindex of 20, co-authored 116 publications receiving 1299 citations. Previous affiliations of Masashi Kurosawa include Kyushu University & Japan Society for the Promotion of Science.
Papers
More filters
Journal ArticleDOI
Growth and applications of GeSn-related group-IV semiconductor materials
Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Masashi Kurosawa,Wakana Takeuchi,Mitsuo Sakashita +5 more
TL;DR: In this paper, a review of the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics is presented.
Journal ArticleDOI
Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation
TL;DR: In this article, the interfacial-oxide layer modulated Al-induced low temperature (450°C) crystallization technique was used to obtain orientation-controlled Si templates on transparent insulating substrates, enabling successive high quality epitaxial growth necessary for advanced Si thin-film solar cells.
Journal ArticleDOI
Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111).
Junji Yuhara,Hiroki Shimazu,Kouichi Ito,Akio Ohta,Masaaki Araidai,Masashi Kurosawa,Masashi Nakatake,Guy Le Lay +7 more
TL;DR: Conclusively, the segregated Ge atoms with trivalent bonding in honeycomb configuration form a characteristic two-dimensional germanene-like structure on Ag(111) surface as an overlayer.
Journal ArticleDOI
Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
Kaoru Toko,Masashi Kurosawa,N. Saitoh,Noriko Yoshizawa,Noritaka Usami,Masanobu Miyao,Takashi Suemasu +6 more
TL;DR: In this paper, Al-induced crystallization of amorphous-Ge films (50nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al.
Journal ArticleDOI
Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)
Jong Hyeok Park,Jong Hyeok Park,Tsuneharu Suzuki,Masashi Kurosawa,Masashi Kurosawa,Masashi Kurosawa,Masanobu Miyao,Taizoh Sadoh +7 more
TL;DR: In this paper, the formation of Ge(100) and (111) on amorphous-insulator at low-temperatures (∼250 °C) is realized through gold-induced-crystallization using a-Ge/Au/SiO2 stacked-structures by combining interface-energy-modulation of substrates.