O
Osamu Nakatsuka
Researcher at Nagoya University
Publications - 304
Citations - 3293
Osamu Nakatsuka is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Annealing (metallurgy). The author has an hindex of 25, co-authored 293 publications receiving 2917 citations. Previous affiliations of Osamu Nakatsuka include Kyoto University.
Papers
More filters
Journal ArticleDOI
High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
Keisuke Kobayashi,Makina Yabashi,Yasutaka Takata,Takashi Tokushima,Shik Shin,Kenji Tamasaku,Daigo Miwa,Tetsuya Ishikawa,Hiroshi Nohira,Takeshi Hattori,Y. Sugita,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima +13 more
TL;DR: In this paper, high-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8.
Journal ArticleDOI
Growth and applications of GeSn-related group-IV semiconductor materials
Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Masashi Kurosawa,Wakana Takeuchi,Mitsuo Sakashita +5 more
TL;DR: In this paper, a review of the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics is presented.
Journal ArticleDOI
Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
TL;DR: In this article, a critical misfit strain control the onset of Sn precipitation at a given thickness of the Ge1−xSnx layer on virtual Ge substrates (v-Ge).
Journal ArticleDOI
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Benjamin Vincent,Yosuke Shimura,Shotaro Takeuchi,Tsuyoshi Nishimura,Geert Eneman,Andrea Firrincieli,Jelle Demeulemeester,André Vantomme,T. Clarysse,Osamu Nakatsuka,Shigeaki Zaima,Johan Dekoster,Matty Caymax,Roger Loo +13 more
TL;DR: In this article, the compatibility of GeSn materials with source/drain engineering processes (B implantation and activation and NiGeSn formation) has been studied, and a low thermal budget has been determined for those processes on GeSn alloys.
Journal ArticleDOI
Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC
Ryohei Konishi,Ryuichi Yasukochi,Osamu Nakatsuka,Yasuo Koide,Miki Moriyama,Masanori Murakami +5 more
TL;DR: In this paper, the Ni/Al and Ni/Ti/Al ohmic contact materials were developed by depositing on p-type 4H-SiC substrates with doping concentrations (N A ) of 3.0-9.0×10 18 cm −3 and subsequently annealing at 800°C in an ultra high vacuum chamber.