Journal ArticleDOI
Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)
Jong Hyeok Park,Jong Hyeok Park,Tsuneharu Suzuki,Masashi Kurosawa,Masashi Kurosawa,Masashi Kurosawa,Masanobu Miyao,Taizoh Sadoh +7 more
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TLDR
In this paper, the formation of Ge(100) and (111) on amorphous-insulator at low-temperatures (∼250 °C) is realized through gold-induced-crystallization using a-Ge/Au/SiO2 stacked-structures by combining interface-energy-modulation of substrates.Abstract:
Selective formation of Ge(100) and (111) on amorphous-insulator at low-temperatures (∼250 °C) is realized through gold-induced-crystallization using a-Ge/Au/SiO2 stacked-structures by combining interface-energy-modulation of substrates. Introduction of thin-Al2O3 layers (∼7 nm thickness) at a-Ge/Au interfaces enables large-grain (≥20 μm) Ge(111) formation, which is speculated to be due to suppression of random bulk-nucleation and domination of (111)-oriented interface-nucleation on SiO2. To examine this speculation, Al2O3-covered substrates are employed. This results in formation of Ge(100), due to energetically favorable (100)-oriented interface-nucleation on Al2O3. Consequently, large-grain (≥20 μm) Ge(100) and (111) are achieved on amorphous-insulators at 250 °C. This technique is very useful to realize flexible-electronics.read more
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Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati,Zhong Lin,Vincent Meunier,Vincent Meunier,Yeonwoong Jung,Jangho J Cha,Saptarshi Das,Di Xiao,Young-Woo Son,Michael S. Strano,Valentino R. Cooper,Liangbo Liang,Liangbo Liang,Steven G. Louie,Steven G. Louie,Emilie Ringe,Wenchao Zhou,Steve S. Kim,Rajesh R. Naik,Bobby G. Sumpter,Humberto Terrones,Humberto Terrones,Fengnian Xia,Yeliang Wang,Jian Zhu,Deji Akinwande,Nasim Alem,Jon A. Schuller,Raymond E. Schaak,Mauricio Terrones,Joshua A. Robinson +30 more
TL;DR: Insight is provided into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies.
Journal ArticleDOI
Growth and applications of GeSn-related group-IV semiconductor materials
Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Masashi Kurosawa,Wakana Takeuchi,Mitsuo Sakashita +5 more
TL;DR: In this paper, a review of the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics is presented.
Journal ArticleDOI
Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
TL;DR: In this article, the Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180°C.
Journal ArticleDOI
High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
Jong Hyeok Park,Jong Hyeok Park,Kenji Kasahara,Kohei Hamaya,Kohei Hamaya,Masanobu Miyao,Taizoh Sadoh +6 more
TL;DR: In this article, the electrical properties of orientation-controlled large-grain gold-induced-crystallization (GIC) crystals on flexible-plastic directly formed by nucleation-controlled Gold-Induced Crystallization was examined.
Journal ArticleDOI
Metal-induced layer exchange of group IV materials
Kaoru Toko,Takashi Suemasu +1 more
TL;DR: A great deal of effort has been put into research on the mechanism and applications of layer exchange, which has allowed various group IV materials (Si, SiGe, Ge, GeSn and C) to form on arbitrary substrates using appropriate metal catalysts.
References
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Journal ArticleDOI
Surface Energy of Germanium and Silicon
TL;DR: In this article, a direct measurement of specific surface energy of Ge and Si made by the cleavage technique was made by measuring the force just necessary to move a crack "in reversible fashion".
Journal ArticleDOI
Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
C. Hayzelden,J. L. Batstone +1 more
TL;DR: In this paper, the nucleation and growth of isolated nickel disilicide precipitates in amorphous Si thin films and the subsequent low-temperature silicide-mediated crystallization of Si was studied using in situ transmission electron microscopy.
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Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
Oliver Nast,Stuart Wenham +1 more
TL;DR: Aluminum-induced crystallization of amorphous silicon is studied as a promising low-temperature alternative to solid-phase and laser crystallization in this article, where the overall process of the Al and Si layer exchange during annealing at temperatures below the eutectic temperature of 577 °C is investigated by various microscopy techniques.
Journal ArticleDOI
(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
Takeshi Hayashi,Masaaki Tanaka,Masaaki Tanaka,Tatau Nishinaga,H. Shimada,H. Tsuchiya,Y. Otuka +6 more
TL;DR: In this article, a III-V diluted magnetic semiconductors (Ga 1-x Mn x )As were grown on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions.
Journal ArticleDOI
In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
TL;DR: In this paper, in-situ X-ray Diffraction was used to study the MIC process for 20 different metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al and Ag).