M
Masashi Kurosawa
Researcher at Nagoya University
Publications - 124
Citations - 1591
Masashi Kurosawa is an academic researcher from Nagoya University. The author has contributed to research in topics: Crystallization & Thin film. The author has an hindex of 20, co-authored 116 publications receiving 1299 citations. Previous affiliations of Masashi Kurosawa include Kyushu University & Japan Society for the Promotion of Science.
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Synthesis of heavily Ga-doped Si1−xSnx/Si heterostructures and their valence-band-offset determination
Masashi Kurosawa,Masashi Kurosawa,Yu Inaishi,Ryuji Tange,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima +6 more
TL;DR: In this article, a polycrystalline growth study has been conducted on heavily Ga-doped amorphous Si0.9Sn0.1 layers deposited on a tensile-strained Si-on-insulator substrate.
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Solid-phase crystallization of Si1− x − y Sn x C y ternary alloy layers and characterization of their crystalline and optical properties
Shota Yano,Takashi Yamaha,Takashi Yamaha,Yosuke Shimura,Wakana Takeuchi,Mitsuo Sakashita,Masashi Kurosawa,Osamu Nakatsuka,Shigeaki Zaima +8 more
TL;DR: The solid phase crystallization of Si1− x − y Sn x C y ternary alloy layers on an insulator has been examined in this paper, where it was found that Sn introduction effectively reduces the crystallization temperature of a Si 1− x− y Sn X C y layer to 400 °C, while a Si1 − y C y binary alloy layer is hardly crystallized even at 800 °C.
Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
Masato Kobayashi,Akio Ohta,Masashi Kurosawa,Masaaki Araidai,Noriyuki Taoka,Mitsuhisa Ikeda,Katsunori Makihara,Seiichi Miyazaki +7 more
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Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures
TL;DR: In this article, the effects of thermal-annealing (temperature: 400-1150 ǫc) and ultraviolet (UV) laserannealing on strainenhancement in Si-pillars covered with Si3N4 stress-liners by plasma-enhanced chemical vapor deposition are investigated.
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Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization
TL;DR: In this article, the lattice planes of two growth-fronts coherently align without strains for short growth-distance (≤ 5μm) and slightly-tilting lattice-planes coherently aligned without generating any defects, where locally-distributed strains are induced in the coalesced regions.