Masataka Hasegawa

TL;DR: The realization of an ultraviolet light–emitting diode with the use of a diamond pn junction was reported, and at forward bias of about 20 volts strong ultraviolet light emission at 235 nanometers was observed and was attributed to free exciton recombination.

TL;DR: In this paper, a low-temperature (300-400°C), large-area (23 cm×20 cm) and efficient synthesis method for graphene-based transparent conductive films using surface wave plasma chemical vapor deposition was presented.

TL;DR: In this article, a roll-to-roll surface wave plasma chemical vapour deposition (SWP-CVD) system was developed for continuous graphene film deposition towards industrial mass production.

Abstract: Nanocrystalline diamond films have been successfully synthesized on plastic substrates at substrate temperatures below $100\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}$ using a microwave plasma chemical-vapor deposition technique. This has been realized by using low reaction-gas pressures and a surface-wave plasma with a low-electron temperature over the growth region. The nanocrystalline diamond films exhibit growth rates with much lower temperature dependence than conventional diamond growth and decreasing nucleation rates with increasing substrate temperatures. These phenomena imply a different growth mechanism from conventional diamond syntheses. In addition, our analysis on the crystal size distribution of the nanocrystalline diamond film indicates the possibility of diamond nucleation in a stable phase in the plasma. The gas-phase nucleation, invoked by the low-electron temperature of the surface-wave plasma, well explains the low-temperature growth and the temperature dependences of the growth rate and the nucleation rate.

TL;DR: In this article, the authors examined the advantageous crystallographic orientation of Cu surface for graphene synthesis by using thermal chemical vapor deposition (CVD) and electron backscatter diffraction and found that Cu(111) predominates over (110) and (100) for single- (SLG) or few-layer graphene growth.